- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369660 > CJD137DE (Continental Device India Limited) TRIAC PDF資料下載
參數(shù)資料
| 型號： | CJD137DE |
| 廠商： | Continental Device India Limited |
| 英文描述： | TRIAC |
| 中文描述： | 可控硅 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 647K |
| 代理商： | CJD137DE |
TRIAC
CJD137D
DPAK (TO-252)
Plastic Package
For use Motor, Light Dimmer, Air Con, Electric Switch Applications
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive Peak Off State Voltage
RMS on State Current
Non Repetitive Peak on State Current
Operating Junction Temperature
UNIT
V
A
A
oC
Storage Temperature
Average Gate Power
- 40 to +125
0.5
oC
W
Peak Gate Power
W
ELECTRICAL CHARACTERISTICS (T
J
=25oC unless specified otherwise)
PARAMETER
Off State Leakage Current
On State Voltage
Holding Current
Gate Trigger Current
SYMBOL
I
DRM
V
TM
I
H
I
GT
TEST CONDITION
V
D
=400V
I
T
=5A, I
G
=35mA
V
D
=12V, I
G
=35mA
V
D
=12V, R
L
=100
T2+ G+
T2+ G-
T2- G-
400E
400F
V
D
=12V, R
L
=100
T2+ G+
T2+ G-
T2- G-
MIN
MAX
100
1.65
20
UNIT
μ
A
V
mA
35
35
35
15
35
mA
mA
mA
mA
mA
15
Gate Trigger Voltage
V
GT
1.5
1.5
1.5
V
V
V
MARKING
CDIL CDIL
CJD137D CJD137DE
XY MX XY MX
XY= Date Code
CJD137DRev120606E
CDIL
CJD137DF
XY MX
T
stg
P
G (AV)
P
GM
T
j
*V
DRM
I
T (RMS)
I
TSM
55
110
VALUE
400
8.0
5.0
SYMBOL
Continental Device India Limited
Data Sheet
Page 1 of 5
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CJD137DF | TRIAC |
| CJD3439 | NPN SILICON PLASTIC HIGH VOLTAGE POWER TRANSISTORS |
| CJD81 | NPN SILICON POWER TRANSISTOR |
| CJD86 | NPN SILICON PLANAR TRANSISTOR |
| CJDX136D | TRIAC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CJD137DF | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:TRIAC |
| CJD200 | 制造商:Central Semiconductor Corp 功能描述:General Purpose NPN SM POWER TRANSISTOR DPAK 12.5W (TC=25C) 制造商:Central Semiconductor Corp 功能描述:General Purpose NPN SM POWER TRANSISTOR DPAK 12.5W (TC=25C) - free partial T/R at 500. |
| CJD200 BK | 功能描述:兩極晶體管 - BJT NPN 40V 5A DPAK RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CJD200 TR13 | 制造商:CENTRAL SEMICONDUCTOR 功能描述:CJD Series 25 V 5 A NPN SMT Complementary Silicon Power Transistor - TO-252 |
| CJD200_10 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。