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參數資料
| 型號： | CJF6388 |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN SILICON PLANAR DARLINGTON POWER TRANSISTOR |
| 中文描述： | NPN硅平面達林頓功率晶體管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 298K |
| 代理商： | CJF6388 |
NPN SILICON PLANAR DARLINGTON POWER TRANSISTOR
CJF6388
TO-220FP Fully Isolated
Plastic Package
Complementary CJF6668
General Purpose Darlington Amplifier and Switching Applications
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
RMS Isolation Voltage ( for 1sec,R.H.
<30%, T
A
=25oC )
Collector Current - Continuous
Peak (2)
Base Current
Total Power Dissipation @ Tc=25oC
Derate Above 25oC
Total Power Dissipation @ Ta=25oC
Derate Above 25oC
Operating and Storage Junction
Temperature Range
V
CBO
V
CEO
V
EBO
100
100
5
3500
1500
10
15
1
40
0.31
2
0.016
V
V
V
(1) V
ISOL
(a)
(b)
I
C
V
RMS
V
RMS
A
A
A
W
W/oC
W
W/oC
oC
I
B
P
D**
P
D
T
j,
T
stg
- 65 to +150
THERMAL RESISTANCE
From Junction to Case
From Junction to Ambient
Lead Temperature for Soldering Purpose
**Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location
beneath the die), the device mounted on a heatsink with thermal grease and a mounting torque of >6 in.lbs.
R
th (j-c)**
R
th (j-a)
T
L
3.2
62.5
260
oC/W
oC/W
oC
(1) RMS Isolation Voltage : (a) 3500 V
RMS
with Package in Clip Mounting Position (b) 1500 V
RMS
with Package
in Screw Mounting Position (for 1sec, R.H.<30% ,Ta=25oC; Pulse Test: Pulse Width <300
μ
s, Duty Cycle<2%)
(2) Pulse Test : Pulse Width =5ms, Duty Cycle<10%
Continental Device India Limited
Data Sheet
Page 1 of 4
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
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