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參數(shù)資料
| 型號(hào)： | CM150TF-12H |
| 廠商： | POWEREX INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 122 x 32 pixel format, LED Backlight available |
| 中文描述： | 150 A, 600 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 53K |
| 代理商： | CM150TF-12H |
Sep.1998
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
Inches
4.21
4.02
3.543
±
0.01
3.15
±
0.01
2.01
1.38
1.28
1.26 Max.
1.18
0.98
0.96
0.79
0.67
Millimeters
107.0
102.0
90.0
±
0.25
80.0
±
0.25
51.0
35.0
32.5
32.0 Max
30.0
25.0
24.5
20.0
17.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of six
IGBTs in a three phase bridge con-
figuration, with each transistor hav-
ing a reverse-connected super-fast
recovery free-wheel diode. All com-
ponents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system as-
sembly and thermal management.
Features:
u
Low Drive Power
u
Low V
CE(sat)
u
Discrete Super-Fast Recovery
Free-Wheel Diode
u
High Frequency Operation
u
Isolated Baseplate for Easy
Heat Sinking
Applications:
u
AC Motor Control
u
Motion/Servo Control
u
UPS
u
Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM150TF-12H
is a 600V (V
CES
), 150 Ampere
Six-IGBT Module.
Type
Current Rating
Amperes
V
CES
Volts (x 50)
CM
150
12
Dimensions
P
Q
R
S
T
U
V
X
Y
Z
AA
Inches
0.57
0.55
0.47
0.43
0.39
0.33
0.30
0.24
0.22
M5 Metric
0.08
Millimeters
14.5
14.0
12.0
11.0
10.0
8.5
7.5
6.0
5.5
M5
2.0
Outline Drawing and Circuit Diagram
MITSUBISHI IGBT MODULES
CM150TF-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
H
D
X
B
S
V
U
K
J
T
R
G
F
L
P
C
A
AA
M
AA
M
M
P
N
GuP
EuP
U
GuN
EuN
GvP
EvP
V
GvN
EvN
GwP
EwP
W
GwN
EwN
P
N
P
P
N
N
U
V
W
G
u
P
G
v
P
G
w
P
G
u
N
G
v
N
G
w
N
E
u
P
E
v
P
E
w
P
E
u
N
E
v
N
E
w
N
X
X
TAB #110, t = 0.5
Q
Q
N
Z - M5 THD
(7 TYP.)
Y - DIA.
(4 TYP.)
E
M
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| CM150TU-12F | 240 x 128 pixel format, CFL Backlight with power harness |
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| CM150TU-12H | 240 x 128 pixel format, CFL Backlight with power harness |
| CM15MD-12H | MEDIUM POWER SWITCHING USE INSULATED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CM150TJ-12F | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:Trench Gate Design Six IGBTMOD⑩ 150 Amperes/600 Volts |
| CM150TL-12NF | 功能描述:IGBT MOD 6PAC 600V 150A NF SER RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| CM150TL-12NF_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM150TL-12NF_12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE |
| CM150TL-24NF | 功能描述:IGBT MOD 6PAC 1200V 150A NF SER RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
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