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參數(shù)資料
| 型號(hào)： | CM400DU-24H |
| 英文描述： | TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 400A I(C) |
| 中文描述： | 晶體管| IGBT功率模塊|半橋| 1.2KV五（巴西）國(guó)際消費(fèi)電子展|四樓一（c） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 43K |
| 代理商： | CM400DU-24H |
Sep.1998
Dimensions
Inches
Millimeters
A
4.21
107.0
B
3.661
±
0.01
93.0
±
0.25
C
2.44
62.0
D
1.89
±
0.01
48.0
±
0.25
E
1.42+0.04/-0.02 36.0+1.0/-0.5
F
1.14
29.0
G
1.02+0.04/-0.2 25.8+1.0/-0.5
H
0.94
24.0
Dimensions
Inches
Millimeters
J
0.79
20.0
K
0.69
17.5
L
0.63
16.0
M
0.35
9.0
N
0.28
7.0
P
0.26 Dia.
Dia. 6.5
Q
M6 Metric
M6
R
M4 Metric
M4
Description:
Mitsubishi IGBT Modules
are designed for use in switching
applications. Each module consists
of one IGBT in a single configura-
tion with a reverse-connected su-
per-fast recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
u
Low Drive Power
u
Low V
CE(sat)
u
Discrete Super-Fast Recovery
Free-Wheel Diode
u
High Frequency Operation
u
Isolated Baseplate for Easy
Heat Sinking
Applications:
u
AC Motor Control
u
Motion/Servo Control
u
UPS
u
Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM400HA-
24H is a 1200V (V
CES
), 400 Am-
pere Single IGBT Module.
Type
Current Rating
Amperes
V
CES
Volts (x 50)
CM
400
24
Outline Drawing and Circuit Diagram
MITSUBISHI IGBT MODULES
CM400HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
G
E
N
E
C
E
G
M
A
B
K
F
J
H
J
D
C
L
Q - THD
(2 TYP.)
P - DIA.
(4 TYP.)
R - THD
(2 TYP.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CM400DY66H | TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C) |
| CM400HA12E | TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 400A I(C) |
| CM400HA24E | TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.4KV V(BR)CES | 400A I(C) |
| CM400HA28 | TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.4KV V(BR)CES | 400A I(C) |
| CM400HA-24H | HIGH POWER SWITCHING USE INSULATED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CM400DU-24NFH | 功能描述:IGBT MOD DUAL 1200V 400A NFH SER RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| CM400DU-24NFH_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM400DU-24NFJ | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:Dual IGBTMOD NFJ-Series Module 400 Amperes/1200 Volts |
| CM400DU-34KA | 功能描述:IGBT MOD DUAL 1700V 400A KA SER RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| CM400DU-34KA_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
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