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參數資料
| 型號： | CM50DY-28H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 中功率開關使用絕緣型 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 48K |
| 代理商： | CM50DY-28H |
Sep.1998
Dimensions
Inches
Millimeters
A
3.70
94.0
B
3.150
±
0.01
80.0
±
0.25
C
1.57
40.0
D
1.34
34.0
E
1.22 Max.
31.0 Max.
F
0.90
23.0
G
0.85
21.5
H
0.79
20.0
J
0.71
18.0
Dimensions
Inches
Millimeters
K
0.67
17.0
L
0.63
16.0
M
0.51
13.0
N
0.47
12.0
P
0.28
7.0
Q
0.256 Dia.
Dia. 6.5
R
0.16
4.0
S
M5 Metric
M5
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching appli-
cations. Each module consists of
two IGBTs in a half-bridge configu-
ration with each transistor having
a reverse-connected super-fast re-
covery free-wheel diode. All com-
ponents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system
assembly and thermal manage-
ment.
Features:
u
Low Drive Power
u
Low V
CE(sat)
u
Discrete Super-Fast Recovery
Free-Wheel Diode
u
High Frequency Operation
u
Isolated Baseplate for Easy
Heat Sinking
Applications:
u
AC Motor Control
u
Motion/Servo Control
u
UPS
u
Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM50DY-28H
is a 1400V-(V
CES
), 50 Ampere
Dual IGBT Module.
Type
Current Rating
Amperes
V
CES
Volts (x 50)
CM
50
28
MITSUBISHI IGBT MODULES
CM50DY-28H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Outline Drawing and Circuit Diagram
B
F
F
C
K
R
R
R
D
A
E
G
N
H
H
J
P
M
C1
E
(3 TYP.)
Q - DIA.
(2 TYP.)
(3 TYP.)
E2
C2E1
E
G
G
S - M5 THD
L
E1
C1
E2
TAB#110 t=0.5
G1
E2
G2
C2E1
相關PDF資料 |
PDF描述 |
|---|---|
| CM50DY-28H | Dual IGBTMOD 50 Amperes/1400 Volts |
| CM50E3U-24H | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| CM50E3U-24H | Chopper IGBTMOD 50 Amperes/1200 Volts |
| CM50MD-12H | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| CM50MD-12H | CIB Module Three Phase Converter Three Phase Inverter Brake 50 Amperes/600 Volts |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CM50E3U-24H | 功能描述:IGBT MOD CHOP 1200V 50A U SER RoHS:是 類別:半導體模塊 >> IGBT 系列:IGBTMOD™ 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| CM50E3U-24H_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
| CM50E3Y12E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 50A I(C) |
| CM50E3Y24E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 50A I(C) |
| CM50MD1-12H | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:CI Module Three Phase Converter Three Phase Inverter 50 Amperes/600 Volts |
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