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參數資料
| 型號： | CMBA857E |
| 英文描述： | TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 200MA I(C) | SOT-23 |
| 中文描述： | 晶體管|晶體管|進步黨| 50V五（巴西）總裁| 200mA的一（c）| SOT - 23封裝 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 76K |
| 代理商： | CMBA857E |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
CMBA847
SOT23
MARKING : AS BELOW
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta= 25 deg C unless otherwise specified)
DESCRIPTION
Collector -Emitter Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
SYMBOL
VCBO
VCEO
VEBO
IC
PC
Tj, Tstg
VALUE
50
50
6.0
200
150
-55 to +150
UNIT
V
V
V
mA
mW
deg C
SYMBOL TEST CONDITION
VCEO
IC=100uA, IB=0
ICBO
VCB=50V, IE=0
IEBO
VEB=6V, IC=0
hFE(1)
IC=1mA,VCE=6V
hFE(2)
IC=0.1mA,VCE=6V
VCE(Sat)
IC=100mA,IB=10mA
VBE(Sat)
IC=100mA,IB=10mA
MIN
50
-
-
150
50
-
-
TYP
-
-
-
-
-
-
-
MAX
-
100
100
800
-
0.30
1.0
UNIT
V
nA
nA
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Dynamic Characteristics
Transition Frequency
Collector Output Capacitance
V
V
ft
Cob
VCE=6V,IC=10mA,
VCB=6V, IE=0
f=1MHz
VCE=6V, IE=0.1mA
f=1kHz, Rg=2kohms
-
-
200
3.5
-
-
MHz
pF
Noise Figure
NF
-
-
15
dB
CLASSIFICATION
hFE(1)
MARKING
E
F
G
150-300
NA
250-500
NB
400-800
NC
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
PIN CONFIGURATION (NPN)
1 = BASE
2 = EMITTER
3 = COLLECTOR
2
1
3
Continental Device India Limited
Data Sheet
Page 1 of 3
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