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參數資料
| 型號： | CMBT4123 |
| 英文描述： | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 200MA I(C) | TO-236AA |
| 中文描述： | 晶體管|晶體管|叩| 30V的五（巴西）總裁| 200mA的一（c）|至236AA |
| 文件頁數： | 1/3頁 |
| 文件大小： | 38K |
| 代理商： | CMBT4123 |
Continental Device India Limited
Data Sheet
Page 1 of 3
GENERAL PURPOSE TRANSISTOR
N–P–N transistor
Marking
CMBT4123 = 5B
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation at T
amb
= 25°C
D.C. current gain
–I
C
= 2 mA; –V
CE
= 1 V
–V
CBO
–V
CEO
–V
EBO
–I
C
P
tot
max.
max.
max.
max.
max
40
30
5
200
225
V
V
V
mA
mW
min.
max.
50
150
h
FE
RATINGS
(at T
A
= 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation at T
amb
= 25°C
–V
CBO
–V
CEO
–V
EBO
–I
C
P
tot
max.
max.
max.
max.
max
40
30
5
200
225
V
V
V
mA
mW
CMBT4123
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
2
1
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
SOT-23 Formed SMD Package
相關PDF資料 |
PDF描述 |
|---|---|
| CMBT4124 | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 200MA I(C) | TO-236AA |
| CMBT4125 | TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 200MA I(C) | TO-236AA |
| CMBT4126 | TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 200MA I(C) | TO-236AA |
| CMBT4401 | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 600MA I(C) | TO-236AA |
| CMBT4403 | TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 600MA I(C) | TO-236AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CMBT4124 | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:GENERAL PURPOSE TRANSISTOR |
| CMBT4125 | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:GENERAL PURPOSE TRANSISTOR |
| CMBT4126 | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:GENERAL PURPOSE TRANSISTOR |
| CMBT4401 | 功能描述:兩極晶體管 - BJT NPN,0.6A,40V GenPur RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CMBT4401-T | 功能描述:兩極晶體管 - BJT NPN 0.6A 40V Gen Pur RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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