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參數資料
| 型號： | CMBT6517 |
| 英文描述： | TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 500MA I(C) | TO-236AA |
| 中文描述： | 晶體管|晶體管|叩| 350V五（巴西）總裁| 500mA的一（c）|至236AA |
| 文件頁數： | 1/3頁 |
| 文件大小： | 38K |
| 代理商： | CMBT6517 |
Continental Device India Limited
Data Sheet
Page 1 of 3
HIGH–VOLTAGE TRANSISTOR
N–P–N transistor
Marking
CMBT6517 = 1Z
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation at T
amb
= 25°C
D.C. current gain
–I
C
= 10 mA; –V
CE
= 10 V
–V
CBO
–V
CEO
–V
EBO
–I
C
P
tot
max.
max.
max.
max.
max
350
350
V
V
V
mA
mW
5
500
225
h
FE
min.
30
RATINGS
(at T
A
= 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation at T
amb
= 25°C
Storage temperature
Junction temperature
–V
CBO
–V
CEO
–V
EBO
–I
C
P
tot
T
stg
Tj
max.
max.
max.
max.
max
–55 to +150
max.
350
350
V
V
V
mA
mW
° C
° C
5
500
225
150
CMBT6517
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
2
1
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
SOT-23 Formed SMD Package
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相關代理商/技術參數 |
參數描述 |
|---|---|
| CMBT6520 | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:HIGH?VOLTAGE TRANSISTOR |
| CMBT8050 | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| CMBT8050C | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| CMBT8050D | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| CMBT8050E | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
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