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參數資料
| 型號： | CMBT8550E |
| 廠商： | Continental Device India Limited |
| 英文描述： | PNP SILICON PLANAR EPITAXIAL TRANSISTOR |
| 中文描述： | 進步黨硅外延平面晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 174K |
| 代理商： | CMBT8550E |
PNP SILICON PLANAR EPITAXIAL TRANSISTOR
CMBT8550
SOT-23
Formed SMD Package
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
UNITS
Collector Base Voltage
VCBO
V
Collector Emitter Voltage
VCEO
V
Emitter Base Voltage
VEBO
V
Collector Current Continuous
IC
mA
Collector Dissipation @ Ta=25C
PC
mW
Operating and Storage Junction
Temperature Range
Tj, Tstg
C
ELECTRICAL CHARACTERISTICS (Ta=25C unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
Collector Base Voltage
VCBO
IC=100A, IE=0
30
V
Collector Emitter Voltage
VCEO
IC=10mA, IB=0
25
V
Emitter Base Voltage
VEBO
IE=10A, IC=0
6
V
Collector Cut off Current
ICBO
VCB=15V, IE=0
50
nA
Emitter Cut off Current
IEBO
VEB=4V, IC=0
500
nA
DC Current Gain
hFE
IC=5mA, VCE=1V
45
*IC=100mA, VCE=1V
100
400
IC=500mA, VCE=1V
40
Collector Emitter Saturation Voltage
VCE(sat)
IC=500mA, IB=50mA
0.5
V
Base Emitter Saturation Voltage
VBE(sat)
IC=500mA, IB=50mA
1.2
V
Transition Frequency
fT
IC=100mA, VCE=10V, f=100MHz
100
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
35
pF
CLASSIFICATIONS
CMBT8550
C
D
E
*hFE
100 - 400
100 - 200
150 - 300
280 - 400
MARKING
55
55C
55D
55E
800
250
- 55 to +125
VALUE
30
25
6
PIN CONFIGURATION (PNP)
1 = BASE
2 = EM ITTER
3 = COLLECTOR
2
1
3
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
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