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參數(shù)資料
型號: CMBZ5261B
廠商: Continental Device India Limited
英文描述: SILIICON PLANAR ZENER DIODES
中文描述: SILIICON平面穩(wěn)壓二極管
文件頁數(shù): 1/4頁
文件大小: 115K
代理商: CMBZ5261B
SILIICON PLANAR ZENER DIODES
CMBZ5229B to CMBZ5261B
4.3V to 47V
SOT-23
Formed SMD Package
Low voltage general purpose voltage regulator diodes.
ABSOLUTE MAXIMUM RATINGS (T
a
=25°C)
DESCRIPTION
Working Voltage Range
Working Voltage Tolerance
Power Dissipation upto T
a
=25oC
Derate Above 25oC
UNIT
V
%
mW
mW/oC
°C/mW
Thermal Resistance Junction to Ambient
mW
mW/oC
°C/mW
°C
°C
* Device mounted on a ceramic alumina of 8mm x 10mm x 0.7 mm
** Device mounted on an FR5 printed - circuit board
Forward Voltage at I
F
=10mA VF < 0.9 V & VF at 200mA <1.5V
ELECTRICAL CHARACTERISTICS (T
a
=25°C unless specified otherwise)
Device
Zener
Voltage
V
Z
( + 5%)
Note1
Nominal
mA
Z
ZK
Z
ZT
I
Z
=I
ZT
I
R
at V
R
T
a
= 25oC
Marking
I
Z
=0.25mA
at 10% Mod
Max
W
22
19
17
11
7
7
5
6
8
8
10
17
22
30
13
15
Max
W
2000
1900
1600
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
Max
m
A
5.0
5.0
5.0
5.0
5.0
5.0
3.0
3.0
3.0
3.0
3.0
3.0
2.0
1.0
0.5
0.1
V
CMBZ5229B
CMBZ5230B
CMBZ5231B
CMBZ5232B
CMBZ5233B
CMBZ5234B
CMBZ5235B
CMBZ5236B
CMBZ5237B
CMBZ5238B
CMBZ5239B
CMBZ5240B
CMBZ5241B
CMBZ5242B
CMBZ5243B
CMBZ5244B
1.0
2.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8.0
8.4
9.1
9.9
10
8D
8E
8F
8G
8H
8J
8K
8L
8M
8N
8P
8Q
8R
8S
8T
8U
Note1: Pulse Test 20ms < tp < 50ms
CMBZ5229B_61BRev_1 290306E
Derate Above 25oC
Thermal Resistance Junction to Ambient
SYMBOL
V
Z
Power Dissipation upto T
a
=25oC
Junction Temperature
Storage Temperature
2.4
417
R
th (j-a)
T
j
1.8
556
R
th (j-a)
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
4.3
4.7
5.1
5.6
14
20
20
20
20
20
20
4.3 to 47
+ 5
VALUE
*P
tot
T
stg
225
150
**P
tot
300
- 55 to +150
20
20
20
20
20
Test
Current
I
ZT
20
20
20
9.5
9.0
1
2
3
Pin Configuration
1 = ANODE
2 = NC
3 = CATHODE
3
1
2
Continental Device India Limited
Data Sheet
Page 1 of 4
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
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