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參數資料
| 型號： | CMM4000-BD |
| 元件分類： | 放大器 |
| 英文描述： | 2000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 1.89 X 1 MM, 0.07 MM HEIGHT, DIE |
| 文件頁數： | 1/4頁 |
| 文件大小： | 450K |
| 代理商： | CMM4000-BD |
3236 Scott Boulevard
Santa Clara, California 95054
Phone: (408) 986-5060
Fax: (408) 986-5095
2.0 to 18.0 GHz
GaAs MMIC
Power Amplifier
Advanced Product Information
June 2005 V1.5
(1 of 4)
Features
Small Size: 1.89 x 1.00 x 0.076 mm
Integrated On-Chip Drain Bias Coil
Integrated On-Chip DC Blocking
Single Bias Operation
Directly Cascadable – Fully Matched
P1dB: 19 dBm @ 18 GHz, Typ.
Linear Gain: 8 dB Typ. @ 18 GHz
Noise Figure: 3.5 dB Typ. @ 10 GHz
pHEMT Technology
Silicon Nitride Passivation
Specifications (TA = 25°C, Vdd = 5V) 1
Parameters
Units
Min
Typ
Max
Frequency Range
GHz
2.0
18.0
Linear Gain
dB
7.0
9.0
Gain Variation (over operating frequency)
±dB
1.3
P1dB Variation (over operating frequency)
dBm
1.6
Power Output (@1 dB Gain Compression)
dBm
18.0
22.0
Saturated Output Power
dBm
19.0
23.0
Third Order Intercept Point (@ 10 GHz)
dBm
29.5
Noise Figure (@10 GHz)
dB
3.5
Input Return Loss 2
dB
-9.0
Output Return Loss 2
dB
-12.0
Current
mA
100
115
130
Thermal Resistance
°C/W
82
Stability
Unconditionally Stable
Absolute Maximum Ratings 1
Parameter
Rating
Drain Voltage
4.5V (min.) / 8.5V (max.)
Drain Current
176 mA
Continuous Power Dissipation
1.5 W
Input Power
20 dBm
Storage Temperature
-50°C to +150°C
Channel Temperature
175°C
Operating Backside Temperature 2
-40°C Min. to (Note 2) °C
Die Attach and Bonding Procedures
Die Attach: Eutectic die attach is recommended. For eutec-
tic die attach: Preform: AuSn (80% Au, 20% Sn); Stage
Temperature: 290°C, ±5°C; Handling Tool: Tweezers; Time: 1
min or less.
Wire Bonding: Wire Size: 0.7 to 1.0 mil in diameter (pre-
stressed); Thermocompression bonding is preferred over
thermosonic bonding.
For thermocompression bonding:
Stage Temperature: 250°C; Bond Tip Temperature: 150°C;
Bonding Tip Pressure: 18 to 40 gms depending on size of
wire.
CMM4000-BD
Chip Diagram
Notes: 1. Tested on Celeritek connectorized evaluation board.
2. Measured on wafer.
Notes: 1. Operation outside these limits can cause permanent damage.
2. Calculation maximum operating temperature:
Tmax = 175–(Pdis [W] x 82) [°C].
Units: mm
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