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參數(shù)資料
| 型號(hào)： | CMPD7006 |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SURFACE MOUNT VERY HIGH VOLTAGE SILICO SWITCHING DIODE |
| 中文描述： | 0.1 A, 600 V, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 110K |
| 代理商： | CMPD7006 |
PRELIMINARY
CMPD7006
CMPD7006A
CMPD7006C
CMPD7006S
SURFACE MOUNT
VERY HIGH VOLTAGE
SILICON SWITCHING DIODE
SOT-23 CASE
Central
Semiconductor Corp.
TM
R0 (8-December 2003)
DESCRIPTION:
The Central Semiconductor CMPD7006,
CMPD7006A, CMPD7006C and CMPD7006S
are silicon switching diodes with various diode
configurations, manufactured by the epitaxial
planar process and packaged in an epoxy
molded SOT-23 surface mount case. These
devices are designed for applications requiring
high voltage switching diodes.
The following configurations are available:
CMPD7006
CMPD7006A
CMPD7006C
CMPD7006S
SINGLE
DUAL, COMMON ANODE
DUAL, COMMON CATHODE
DUAL, IN SERIES
MARKING CODE: C7006
MARKING CODE: C706A
MARKING CODE: C706C
MARKING CODE: C706S
MAXIMUM RATINGS PER DIODE:
(TA=25°C)
SYMBOL
VR
VRRM
IF
IFRM
IFSM
IFSM
PD
UNITS
V
Continuous Reverse Voltage
600
Peak Repetitive Reverse Voltage
600
V
Continous Forward Current
100
mA
Peak Repetitive Forward Current
300
mA
Forward Surge Current, tp=1.0 μs
4.0
A
Forward Surge Current, tp=1.0 s
1.0
A
Power Dissipation
350
mW
Operating and Storage
Junction Temperature
TJ, Tstg
Θ
JA
-65 to +150
°C
Thermal Resistance
357
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
IR
VR=480V
IR
VR=480V, TA=150°C
BVR
VF
IF=10mA
VF
IF=50mA
VF
IF=100mA
CT
VR=0V, f=1.0 MHz
trr
MIN
TYP
7.0
MAX
100
100
UNITS
nA
μA
V
V
V
V
pF
ns
IR=1.0
μ
A
600
675
0.88
1.04
1.16
1.0
1.2
1.4
5.0
500
IR=IF=10mA, RL=100
,
Rec. to 1.0mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CMPD7006A | SURFACE MOUNT VERY HIGH VOLTAGE SILICO SWITCHING DIODE |
| CMPD7006C | SURFACE MOUNT VERY HIGH VOLTAGE SILICO SWITCHING DIODE |
| CMPD7006S | SURFACE MOUNT VERY HIGH VOLTAGE SILICO SWITCHING DIODE |
| CMRA2465E | |
| CMRA2435 | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CMPD7006A | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SURFACE MOUNT VERY HIGH VOLTAGE SILICO SWITCHING DIODE |
| CMPD7006C | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SURFACE MOUNT VERY HIGH VOLTAGE SILICO SWITCHING DIODE |
| CMPD7006S | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SURFACE MOUNT VERY HIGH VOLTAGE SILICO SWITCHING DIODE |
| CMPD914 | 功能描述:二極管 - 通用，功率，開關(guān) 100V If/250mA T/R RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| CMPD914 BK | 功能描述:Diode Standard 75V 250mA (DC) Surface Mount SOT-23 制造商:central semiconductor corp 系列:- 包裝:散裝 零件狀態(tài):有效 二極管類型:標(biāo)準(zhǔn) 電壓 - DC 反向（Vr）（最大值）:75V 電流 - 平均整流（Io）:250mA（DC） 不同 If 時(shí)的電壓 - 正向（Vf）:1V @ 10mA 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時(shí)間（trr）:4ns 不同?Vr 時(shí)的電流 - 反向漏電流:5μA @ 75V 不同?Vr，F(xiàn) 時(shí)的電容:4pF @ 0V，1MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商器件封裝:SOT-23 工作溫度 - 結(jié):-65°C ~ 150°C 標(biāo)準(zhǔn)包裝:3,500 |
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