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參數資料
| 型號： | CMPTA42NPN |
| 廠商： | Central Semiconductor Corp. |
| 英文描述： | SILICON COMPLEMENTARY HIGH VOLTAGE TRANSISTOR |
| 中文描述： | 高壓硅晶體管互補 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 110K |
| 代理商： | CMPTA42NPN |
MAXIMUM RATINGS:
(TA=25°C)
SYMBOL
VCBO
VCEO
VEBO
IC
PD
CMPTA42
300
300
6.0
CMPTA92
300
300
5.0
UNITS
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
500
350
TJ,Tstg
Θ
JA
-65 to +150
357
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
CMPTA42
MIN
CMPTA92
MIN
SYMBOL
TEST CONDITIONS
MAX
MAX
UNITS
ICBO
IEBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
VCB=200V
VBE=6.0V
VBE=3.0V
IC=100
μ
A
IC=1.0mA
IE=100
μ
A
IC=20mA, IB=2.0mA
IC=20mA, IB=2.0mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V, IE=0, f=1.0MHz
100
250
nA
100
-
nA
-
100
nA
300
300
V
300
300
V
6.0
5.0
V
0.5
0.5
V
0.9
0.9
V
25
25
40
40
40
25
50
50
MHz
6.0
6.0
pF
CMPTA42 NPN
CMPTA92 PNP
SILICON COMPLEMENTARY
HIGH VOLTAGE TRANSISTOR
SOT-23 CASE
Central
Semiconductor Corp.
TM
R5 (6-May 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPTA42,
CMPTA92 types are complementary surface
mount epoxy molded silicon planar epitaxial
transistors designed for high voltage applications.
MARKING CODE:
CMPTA42: C1D
CMPTA92: C2D
相關PDF資料 |
PDF描述 |
|---|---|
| CMPTA92PNP | SILICON COMPLEMENTARY HIGH VOLTAGE TRANSISTOR |
| CMPZ4101 | CAP 470PF 100V +50-20% NP0(C0G) SMD-1206 SN100 TR-7-PL FEED-THRU |
| CMPZ4102 | Ceramic Multilayer Capacitor; Capacitance:1000pF; Capacitance Tolerance:+50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:1206; Series:W3F; Features:Feedthru; Leaded Process Compatible:Yes |
| CMPZ4103 | Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance:+50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes |
| CMPZ4104 | Ceramic Multilayer Capacitor; Capacitance:2200pF; Capacitance Tolerance:+50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:1206; Series:W3F; Features:Feedthru; Leaded Process Compatible:Yes |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CMPTA44 | 功能描述:兩極晶體管 - BJT NPN High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CMPTA44 TR | 功能描述:兩極晶體管 - BJT NPN High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CMPTA44_10 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SURFACE MOUNT EXTREMELY HIGH VOLTAGE NPN SILICON TRANSISTOR |
| CMPTA46 | 功能描述:兩極晶體管 - BJT NPN Extremely High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CMPTA46 TR | 制造商:CENTRAL SEMICONDUCTOR 功能描述:CMPTA Series 450 V 500 mA NPN Extremely High Voltage Silicon Transistor - SOT-23 |
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