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參數(shù)資料
| 型號： | CMT04N60N220FP |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | POWER MOSFET |
| 中文描述： | 功率MOSFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 329K |
| 代理商： | CMT04N60N220FP |
CMT04N60
POWER MOSFET
2003/06/25
Preliminary
Rev. 1.1
Champion Microelectronic Corporation
Page 1
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to
withstand high energy in the avalanche mode and switch
efficiently. This new high energy device also offers a
drain-to-source diode with fast recovery time. Designed for
high voltage, high speed switching applications such as
power supplies, converters, power motor controls and
bridge circuits.
PIN CONFIGURATION
TO-220/TO-220FP
Top View
FEATURES
!
Higher Current Rating
!
Lower Rds(on)
!
Lower Capacitances
!
Lower Total Gate Charge
!
Tighter VSD Specifications
!
Avalanche Energy Specified
SYMBOL
1
2
3
G
D
S
D
S
G
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
I
D
I
DM
V
GS
V
GSM
P
D
Value
4.0
14
±20
±40
96
38
-55 to 150
80
1.30
100
260
Unit
A
V
V
W
Drain to Current
－
Continuous
－
Pulsed
Gate-to-Source Voltage
－
Continue
－
Non-repetitive
Total Power Dissipation
TO-220
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy
－
T
J
= 25
℃
(V
DD
= 100V, V
GS
= 10V, I
L
= 4A, L = 10mH, R
G
= 25
)
Thermal Resistance
－
Junction to Case
－
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
T
J
, T
STG
E
AS
θ
JC
θ
JA
T
L
℃
mJ
℃
/W
℃
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