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參數(shù)資料
| 型號： | CMT08N50N220 |
| 廠商： | Champion Microelectronic Corp. |
| 英文描述： | POWER FIELD EFFECT TRANSISTOR |
| 中文描述： | 功率場效應晶體管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 226K |
| 代理商： | CMT08N50N220 |
CMT08N50
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
2003/03/31
Preliminary
Rev. 1.0
Champion Microelectronic Corporation
Page 1
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
PIN CONFIGURATION
TO-220/TO-220FP
Top View
FEATURES
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS
(on) Specified at Elevated Temperature
SYMBOL
1
2
3
G
D
S
D
S
G
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
I
D
I
DM
V
GS
V
GSM
P
D
Value
8.0
32
±20
±40
125
40
-55 to 150
320
1.0
62.5
260
Unit
A
V
V
W
Drain to Current
Gate-to-Source Voltage
Total Power Dissipation
TO-220
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy
(V
DD
= 100V, V
GS
= 10V, I
L
= 8A, L = 10mH, R
G
= 25
)
Thermal Resistance
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Continuous
Pulsed
Continue
Non-repetitive
T
J
, T
STG
E
AS
θ
JC
θ
JA
T
L
T
J
= 25
mJ
/W
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