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參數資料
| 型號： | CMT70N03 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N CHANNEL LOGIC LEVEL POWER MOSFET |
| 中文描述： | N通道功率MOSFET的邏輯電平 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 208K |
| 代理商： | CMT70N03 |
CMT70N03
N-C
HANNEL
Logic Level Power M
OSFET
2004/04/13 Champion Microelectronic Corporation
Page 1
APPLICATION
Buck Converter High Side Switch
Other Applications
V
DSS
30V
FEATURES
R
DS(ON)
Typ.
6.6m
I
D
71A
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Improved UIS Ruggedness
SYMBOL
PIN CONFIGURATION
TO-252
Front View
1
2
3
G
D
S
ABSOLUTE MAXIMUM RATINGS
D
S
G
N-Channel MOSFET
Rating
Symbol
V
DSS
I
D
I
D
I
DM
V
GS
P
D
Value
30
71
45
284
±20
66
0.53
3.0
-55 to 150
TBD
300
260
Unit
V
A
Drain to Source Voltage (Note 1)
Drain to Current
－
Continuous Tc = 25
℃
, V
GS
@10V (Note 2)
－
Continuous Tc = 100
℃
, V
GS
@10V (Note 2)
－
Pulsed Tc = 25
℃
, V
GS
@10V (Note 3)
Gate-to-Source Voltage
－
Continue
Total Power Dissipation
Derating Factor above 25
℃
Peak Diode Recovery dv/dt (Note 4)
Operating Junction and Storage Temperature Range
Single Pulse Avalanche Energy
Maximum Lead Temperature for Soldering Purposes
Maximum Package Body for 10 seconds
THERMAL RESISTANCE
Symbol
Parameter
R
θ
JC
Junction-to-case
V
W
W/
℃
V/ns
℃
mJ
℃
℃
dv/dt
T
J
, T
STG
E
AS
T
L
T
PKG
Min
Typ
Max
1.9
Units
℃
/W
Test Conditions
Water cooled heatsink, P
D
adjusted for a peak junction
temperature of +150
℃
Minimum pad area, 2-oz copper, FR-4 circuit board, double
sided
1 cubic foot chamber, free air
R
θ
JA
Junction-to-ambient
(PCB Mount)
Junction-to-ambient
50
℃
/W
R
θ
JA
62
℃
/W
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