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參數資料
| 型號： | CNX83A.W |
| 廠商： | QT OPTOELECTRONICS |
| 元件分類： | 光電耦合器 |
| 英文描述： | DIODE ZENER SINGLE 200mW 18Vz 7mA-Izt 0.05 0.1uA-Ir 14 SOD-323 3K/REEL |
| 中文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封裝： | DIP-6 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 64K |
| 代理商： | CNX83A.W |
6
1
FEATURES
Input/Output pin distance 10.16 mm
UL recognized (File # E90700)
DESCRIPTION
The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W,
consist of a gallium arsenide infrared emitting diode driving a
silicon phototransistor in a 6-pin dual in-line package.
2
1
3
NC
5
6
NC
SCHEMATIC
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. NO CONNECTION
CNX82A.W
SL5582.W
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
CNX83A.W
SL5583.W
4
2
1
3
NC
5
6
4
6-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
CNX82A.W, CNX83A.W, SL5582.W & SL5583.W
APPLICATIONS
Power supply regulators
Digital logic inputs
Microprocessor inputs
PACKAGE DIMENSIONS
S
0.016 (0.40)
0.008 (0.20)
0.070 (1.78)
0.045 (1.14)
0.350 (8.89)
0.330 (8.38)
0.154 (3.90)
0.100 (2.54)
0.200 (5.08)
0.115 (2.92)
0.004 (0.10)
MIN
0.270 (6.86)
0.240 (6.10)
0.400 (10.16)
TYP
0
°
to 15
°
0.022 (0.56)
0.016 (0.41)
0.100 (2.54) TYP
NOTE
All dimensions are in inches (millimeters)
4/13/00 200024D
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Junction Temperature
Total Device Power Dissipation @ T
A
= 25
°
C
EMITTER
DC/Average Forward Input Current
Reverse Input Voltage
Forward Current - Peak (1μs pulse, 300pps)
LED Power Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
DETECTOR
Collector-Emitter Voltage
Collector-Base Voltage (CNX83A)
Emitter-Collector Voltage
Continuous Collector Current
Detector Power Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
Symbol
Value
Units
T
STG
-55 to +150
°
C
T
OPR
T
SOL
T
J
P
D
-55 to +100
260 for 10 sec
125
250
°
C
°
C
°
C
mW
I
F
100
mA
V
R
5.0
3.0
140
1.33
V
A
I
F
(pk)
P
D
mW
mW/
°
C
V
CEO
50
V
V
CBO
V
ECO
I
C
70
7
100
150
2.0
V
V
mA
mW
mW/
°
C
P
D
ABSOLUTE MAXIMUM RATINGS
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