- 您現在的位置：買賣IC網 > PDF目錄380047 > CPH5847 (Sanyo Electric Co.,Ltd.) MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device PDF資料下載
參數資料
| 型號： | CPH5847 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
| 中文描述： | MOSFET的：N溝道MOSFET的硅SBD智能交通：肖特基二極管通用開關設備 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 60K |
| 代理商： | CPH5847 |
CPH5847
No.8689-1/6
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN8689
CPH5847
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package
facilitating high-density mounting.
[MOSFET]
Ultrahigh-speed switching.
1.8V drive.
[SBD]
Short reverse recovery time.
Low forward voltage.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : XZ
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
20
±
10
1.5
V
V
A
A
W
°
C
°
C
PW
≤
10
μ
s, duty cycle
≤
1%
Mounted on a ceramic board (900mm
2
0.8mm) 1unit
6
0.8
150
--55 to +125
VRRM
VRSM
IO
IFSM
Tj
Tstg
30
35
V
V
A
A
°
C
°
C
1
3
50Hz sine wave, 1 cycle
--55 to +125
--55 to +125
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
82505PE MS IM TB-00001763
相關PDF資料 |
PDF描述 |
|---|---|
| CPH6411 | N CHANNEL MOS SILICON TRANSISTOR |
| CPH6424 | CPH6424 |
| CPH6521 | CPH6521 |
| CPI-210 | SURFACE MOUNTABLE PHOTO INTERRUPTER |
| CPK-1001-716H | SURFACE MOUNT COUPLER |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CPH5847-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH SCHOT DIODE SOT346 |
| CPH5852 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode |
| CPH5852-TL-E | 功能描述:MOSFET P-CH 30V 2A CPH5 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| CPH5854 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
| CPH5854-TL-E | 制造商:SANYO 功能描述:Pch+SBD 30V 2A 0.145 CPH5 Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH SCHOT DIODE SOT346 制造商:Sanyo 功能描述:0 |
發布緊急采購，3分鐘左右您將得到回復。