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參數(shù)資料
型號(hào): CPH6415
文件頁數(shù): 1/4頁
文件大小: 31K
代理商: CPH6415
CPH6414
No.7299-1/4
Features
Low ON-resistance.
Ultrahigh-speed switcing.
4V drive.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
Ratings
Unit
V
V
A
A
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
30
±
20
5
PW
10
μ
s, duty cycle
1%
Mounted on a ceramic board(1200mm
2
0.8mm)
20
1.6
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=
±
16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=3A
ID=3A, VGS=10V
ID=1.5A, VGS=4V
30
V
μ
A
μ
A
V
S
m
m
1
±
10
2.6
1.2
3.1
4.5
37
63
Static Drain-to-Source On-State Resistance
48
88
Marking : KQ
Continued on next page.
N-Channel Silicon MOSFET
CPH6414
Ordering number : ENN7299
83002 TS IM TA-100191
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ultrahigh-Speed Switching Applications
Package Dimensions
unit : mm
2151A
[CPH6414]
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Preliminary
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
0.05
0
0
0
1
0
0
0.95
1
2
3
6
5
4
2
0
2.9
0.15
0.4
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