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參數(shù)資料
| 型號： | CPU165MK |
| 廠商： | International Rectifier |
| 英文描述： | IGBT SIP MODULE Short Circuit Rated UltraFast IGBT |
| 中文描述： | 園區(qū)模塊IGBT的短路額定IGBT的超快速 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 498K |
| 代理商： | CPU165MK |
C-133
Revision 1
IGBT SIP MODULE
Features
Fully isolated printed circuit board mount package
Switching-loss rating includes all "tail" losses
HEXFRED
Optimized for medium operating frequency (1 to 10kHz)
See Fig. 1 for Current vs. Frequency curve
Parameter
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
Typ.
—
—
0.1
20 (0.7)
Max.
1.5
2.0
—
—
Units
R
θ
JC
(IGBT)
R
θ
JC
(DIODE)
R
θ
CS
(MODULE)
Wt
°C/W
g (oz)
TM
soft ultrafast diodes
PD - 5.028
Fast IGBT
CPU165MF
Thermal Resistance
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 min.
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
42
23
120
120
15
120
±20
2500
83
33
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
V
ISOL
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
V
V
RMS
W
-40 to +150
°C
300 (0.063 in. (1.6mm) from case)
5-7 lbfin (0.55-0.8 Nm)
14 A
RMS
with T
C
= 90°C, T
J
= 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
Product Summary
Output Current in a Typical 5.0 kHz Motor Drive
1,2
4
5
9
6,7
11,12
Q1
Q2
D1
D2
IMS-1
Next Data Sheet
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