
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 minute
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
20
10
60
60
9.3
60
±20
2500
63
25
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
V
ISOL
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
V
V
RMS
W
-40 to +150
°C
300 (0.063 in. (1.6mm) from case)
5-7 lbfin (0.55-0.8 Nm)
CPV364M4U
PRELIMINARY
PD- 5041
Parameter
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
Typ.
–––
–––
0.10
20 (0.7)
Max.
2.0
3.0
–––
–––
Units
R
θ
JC
(IGBT)
R
θ
JC
(DIODE)
R
θ
CS
(MODULE)
Wt
°C/W
g (oz)
UltraFast IGBT
IGBT SIP MODULE
Features
Fully isolated printed circuit board mount package
Switching-loss rating includes all "tail" losses
HEXFRED
Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
Thermal Resistance
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
3
6
7
13
19
18
15
10
16
4
9
12
D 1
D 3
D 5
D 2
D 4
D 6
Q1
Q2
Q3
Q4
Q5
Q6
1
Output Current in a Typical 20 kHz Motor Drive
12 A
RMS
per phase (3.5 kW total) with T
C
= 90°C, T
J
= 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 115% (See Figure 1)
Product Summary
TM
soft ultrafast diodes
Absolute Maximum Ratings
1/21/97
IMS-2