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參數資料
| 型號： | CQX14 |
| 廠商： | QT OPTOELECTRONICS |
| 元件分類： | 紅外LED |
| 英文描述： | GAAS INFRARED EMITTING DIODE |
| 中文描述： | 1 ELEMENT, INFRARED LED, 940 nm |
| 文件頁數： | 1/3頁 |
| 文件大小： | 103K |
| 代理商： | CQX14 |
0.040 (1.02)
0.100 (2.54)
0.050 (1.27)
45°
0.040 (1.02)
1
3
0.030 (0.76)
NOM
0.184 (4.67)
0.209 (5.31)
1.00 (25.4)
MIN
0.255 (6.48)
ANODE
(CASE)
0.020 (0.51) 2X
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip
1/16”
(1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, P
O
, is the total power radiated by the device into
a solid angle of 2
!
steradians.
PACKAGE DIMENSIONS
FEATURES
Good optical to mechanical alignment
Mechanically and wavelength matched
to the TO-18 series phototransistor
Hermetically sealed package
High irradiance level
European “Pro Electron” registered
Parameter
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
I
F
V
R
P
D
P
D
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
100
10
3
170
1.3
Unit
°C
°C
°C
°C
mA
A
V
mW
W
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(3,4,5 and 6)
Soldering Temperature (Flow)
(3,4 and 6)
Continuous Forward Current
Forward Current (pw, 1μs; 200Hz)
Reverse Voltage
Power Dissipation (T
A
= 25°C)
(1)
Power Dissipation (T
C
= 25°C)
(2)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
CQX14, CQX16
GaAs INFRARED EMITTING DIODE
DESCRIPTION
The CQX14/16 are 940 nm LEDs in a
narrow angle, TO-46 packages.
ANODE
(Connected
To Case)
3
1
CATHODE
SCHEMATIC
PARAMETER
Peak Emission Wavelength
Emission Angle at 1/2 Power
Forward Voltage
Reverse Leakage Current
Total Power CQX14
(7)
Total Power CQX16
(7)
Rise Time 0-90% of output
Fall Time 100-10% of output
TEST CONDITIONS
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
V
R
= 3 V
I
F
= 100 mA
I
F
= 100 mA
SYMBOL
"
P
#
V
F
I
R
P
O
P
O
t
r
t
f
MIN
—
—
—
—
5.4
1.5
—
—
TYP
940
±8
—
—
—
—
1.0
1.0
MAX
—
—
1.7
10
—
—
—
—
UNITS
nm
Deg.
V
μA
mW
mW
μs
μs
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25°C) (All measurements made under pulse conditions)
2001 Fairchild Semiconductor Corporation
DS300284
4/24/01
1 OF 3
www.fairchildsemi.com
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