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參數資料
| 型號： | CR-15 |
| 英文描述： | GaAs MMIC VSAT Power Amplifier， 2W， 6.40-7.025 GHz |
| 中文描述： | 砷化鎵微波單片集成電路甚小孔徑終端功放，2W的，6.40-7.025 GHz的 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 40K |
| 代理商： | CR-15 |
GaAs MMIC VSAT Power Amplifier, 2W, 6.40-7.025 GHz
AM42-0039
AM42-0039
M/A-COM Division of AMP Incorporated
I
North America: Tel. (800) 366-2266, Fax (800) 618-8883
I
Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
I
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Ordering Information
Part Number
AM42-0039
Package
Ceramic Bolt Down Package
Electrical Specifications:
T
A
= +25°C, V
DD
= +9V, V
GG
adjusted for I
DD
= 1050 mA, Freq. = 6.40 to 7.025 GHz
Parameter
Abbv.
Test Conditions
Linear Gain
G
L
P
IN
≤
-10 dBm
Input VSWR
VSWR
IN
P
IN
≤
-10 dBm
Output VSWR
VSWR
OUT
P
IN
≤
-10 dBm
Output Power
P
SAT
P
IN
=
+10 dBm, I
DD
=1050 mA Typ.
Output Power vs. Frequency
P
SAT
P
IN
=
+10 dBm, I
DD
=1050 mA Typ.
Output Power vs. Temperature
(with respect to T
A
=+25°C)
T
A
= -40°C to +70°C
Drain Bias Current
I
DD
P
IN
=
+10 dBm
Gate Bias Voltage
V
GG
P
IN
=
+10 dBm, I
DD
=1050 mA Typ.
Gate Bias Current
Ι
GG
P
IN
=
+10 dBm, I
DD
=1050 mA Typ.
Thermal Resistance
θ
JC
25°C Heat Sink
Second Harmonic
f
2
P
IN
=
+10 dBm, I
DD
=1050 mA Typ.
Third Harmonic
f
3
P
IN
=
+10 dBm, I
DD
=1050 mA Typ.
Units
dB
—
—
dBm
dB
dB
Min.
27
—
—
31.5
—
—
Typ.
30
2.3:1
2.3:1
33.0
1.0
±0.4
Max.
—
2.7:1
—
34.0
1.5
—
P
SAT
P
IN
=
+10 dBm, I
DD
=1050 mA Typ.
mA
V
mA
°C/W
dBc
dBc
900
-2.4
—
—
—
—
1050
-1.2
20
7 (Est.)
-35
-45
1100
-0.4
40
—
—
—
CR-15
Features
High Linear Gain: 30 dB Typ.
High Saturated Output Power: +33 dBm Typ.
High Power Added Efficiency: 22% Typ.
50
Input/Output Broadband Matched
High Performance Ceramic Bolt Down Package
Description
M/A-COM’s AM42-0039 is a three-stage MMIC power
amplifier in a ceramic bolt down style hermetic package. The
AM42-0039 employs a fully matched monolithic chip with
internally decoupled Gate and Drain bias networks. The
AM42-0039 is designed to be operated from a constant current
Drain supply. By varying the Gate bias voltage, the saturated
output power performance of this device can be tailored for
various applications.
The AM42-0039 is designed for use as an output stage or driver
amplifier for VSAT transmitter systems. This amplifier is
monolithic and requires a minimum of external components.
M/A-COM’s AM42-0039 is fabricated using a mature 0.5
micron GaAs MESFET process. The chip is fully passivated for
increased performance and reliability. These amplifiers are
100% RF tested to ensure compliance to performance
specifications.
GaAs MMIC VSAT Power Amplifier, 2W
6.40 - 7.025 GHz
Notes: (unless otherwise specified)
1. Dimensions are in inches.
2. Tolerance: .XXX = ± 0.005
.XX = ± 0.010
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