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參數資料
| 型號： | CR02 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | LOW POWER USE PLANAR PASSIVATION TYPE |
| 中文描述： | 低功率的用途鈍化平面型 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 67K |
| 代理商： | CR02 |
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
CR02AM
APPLICATION
Solid state relay, leakage protector, fire alarm, timer, ringcounter, electric blankets, strobe flasher,
other general purpose control applications
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
8
1
8
1
Voltage class
Unit
V
V
V
V
V
MAXIMUM RATINGS
4
200
300
160
200
160
6
300
400
240
300
240
I
T (AV)
........................................................................0.3A
V
DRM
.................................................... 200V/300V/400V
I
GT
.........................................................................100
μ
A
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
—
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine half wave, 180
°
conduction, T
a
=30
°
C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
A
2
s
W
W
V
V
A
°
C
°
C
g
Ratings
0.47
0.3
10
0.4
0.1
0.01
6
6
0.1
–40 ~ +125
–40 ~ +125
0.23
8
1. With Gate-to-cathode resistance R
GK
=1k
8
400
500
320
400
320
TYPE
NAME
VOLTAGE
CLASS
2
1
3
1
2
3
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
φ
5.0 MAX
4.4
5
1
3
1
1.25 1.25
CIRCUMSCRIBE
CIRCLE
φ
0.7
1
3
2
OUTLINE DRAWING
Dimensions
in mm
JEDEC : TO-92
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