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參數資料
| 型號： | CR04AM600-12 |
| 廠商： | Powerex Power Semiconductors |
| 英文描述： | Lead-Mount, Phase Control SCR 0.4 Amperes/400-600 Volts |
| 中文描述： | 鉛山，相位控制晶閘管0.4 Amperes/400-600伏特 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 75K |
| 代理商： | CR04AM600-12 |
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR04AM
LOW POWER USE
GLASS PASSIVATION TYPE
CR04AM
APPLICATION
Ignitor, solid state relay, strobe flasher, circuit breaker, other general purpose control applications
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
8
1
8
1
Voltage class
Unit
V
V
V
V
V
MAXIMUM RATINGS
8
400
500
320
400
320
12
600
720
480
600
480
I
T (AV)
........................................................................0.4A
V
DRM
..............................................................400V/600V
I
GT
.........................................................................100
μ
A
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
—
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine half wave, 180
°
conduction, T
a
=54
°
C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
A
2
s
W
W
V
V
A
°
C
°
C
g
Ratings
0.63
0.4
10
0.4
0.5
0.1
6
6
0.3
–40 ~ +125
–40 ~ +125
0.23
8
1. With Gate-to-cathode resistance R
GK
=1k
TYPE
NAME
VOLTAGE
CLASS
2
1
3
1
2
3
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
φ
5.0 MAX
4.4
5
1
3
1
1.25 1.25
CIRCUMSCRIBE
CIRCLE
φ
0.7
1
3
2
OUTLINE DRAWING
Dimensions
in mm
JEDEC : TO-92
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