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參數(shù)資料
| 型號： | CS86 |
| 廠商： | Fujitsu Limited |
| 英文描述： | The CS86 series of 0.18 mm standard cells is a line of CMOS ASICs based on higher integration implemented |
| 中文描述： | 0.18毫米的標準單元CS86系列是CMOS系列基于ASIC的高集成實施 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 141K |
| 代理商： | CS86 |
DS06-20209-2E
FUJITSU SEMICONDUCTOR
DATA SHEET
Semicustom
CMOS
Standard cell
CS86 Series
I
DESCRIPTION
The CS86 series of 0.18
μ
m standard cells is a line of CMOS ASICs based on higher integration implemented
by introducing wiring pitch reduction technology and on I/O pad placement technology to the conventional CS81
series.
The CS86 series has three types of cell sets (CS86MN, CS86MZ, and CS86ML), covering a variety of applications,
from portable devices requiring low power consumption to image processors requiring large-scale circuitry and
high speed.The three types of cell sets can be contained on one chip, allowing those system LSIs to be imple-
mented which require low power consumption as well as high-speed operation for certain types of processing.
I
FEATURES
Technology
: 0.18
μ
m silicon-gate CMOS, 4- to 6-layer wiring
The same chip can therefore incorporate the standard transistor cell and the ultrahigh-
speed or low-leakage process cell together.
:
+
1.8 V
±
0.15 V (normal) to
+
1.1 V
±
0.1 V
Junction temperature range :
40
°
C to
+
125
°
C
Cell set
CS86MN :
Offers standard transistor characteristics. Designed as a library for products requiring higher
throughputs.
CS86MZ :
Offers transistor characteristics for ultra high-speed operation. Designed as a library for
products that require higher processing speeds than those provided by CS86MN.
CS86ML :
Offers transistor charactersistics with less leak current. Designed as a library for mobile
devices and other products requiring lower power consumption.
Cell Specifications :
Cell set name
CS86MZ
Delay time*
1
70 ps
Power consumption*
2
42.7 nW/MHz
Leak power*
3
3.922 nW
Supply voltage
*1 : 2 input NAND cell (low-power type) , F/O
=
2, normal load, Power supply voltage 1.8 V, Temperature
=
+
25
°
C
*2 : 2 input NAND cell (low-power type) , F/O
=
1, 4 Grid, Power supply voltage 1.8 V, Temperature
=
+
25
°
C
*3 : 2 input NAND cell (low-power type) , F/O
=
0, non load, Power supply voltage 1.8 V, Temperature
=
+
25
°
C
(Continued)
CS86MN
88 ps
40.1 nW/MHz
0.023 nW
CS86ML
136 ps
38.3 nW/MHz
0.0067 nW
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相關(guān)代理商/技術(shù)參數(shù) |
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| CS861 | 制造商:HVPSI 制造商全稱:High Voltage Power Solutions, Inc. 功能描述:MOV Modules |
| CS861A1 | 制造商:HVPSI 制造商全稱:High Voltage Power Solutions, Inc. 功能描述:MOV Modules |
| CS861A2 | 制造商:HVPSI 制造商全稱:High Voltage Power Solutions, Inc. 功能描述:MOV Modules |
| CS861B1 | 制造商:HVPSI 制造商全稱:High Voltage Power Solutions, Inc. 功能描述:MOV Modules |
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