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參數(shù)資料
| 型號： | CSA539Y |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 190K |
| 代理商： | CSA539Y |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP SILICON PLANAR EPITAXIAL TRANSISTOR
CSA537
TO-39
Metal Can Package
MEDIUM SPEED SWITCHING AND LINEAR AMPLIFIER APPLICATIONS
ABSOLUTE MAXIMUM RATINGS (Ta=25oC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Emitter Current Contiuuous
Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
I
E
P
D
T
j
T
stg
UNITS
V
V
V
A
A
W
oC
oC
ELECTRICAL CHARACTERISTICS (Ta=25oC unless specified otherwise)
DESCRIPTION
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter(Sat) Voltage
Base Emitter (Sat) Voltage
DC Current Gain
SYMBOL
B
VCBO
B
VCEO
BV
EBO
I
CBO
I
EBO
V
CE(Sat)
V
BE(Sat)
h
FE (1)
h
FE (2)
| h
fe
|
TEST CONDITION
I
C
=10
μ
A, I
E
= 0
I
C
=5mA, I
E
=0
I
E
=10mA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=3V, I
C
=0
I
C
=150mA,I
B
=15mA
I
C
=150mA,I
B
=15mA
I
C
=50mA,V
CE
=4V
I
C
=400mA,V
CE
=4V
I
C
=20mA, V
CE
=10V,
f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
UNITS
V
V
V
nA
nA
V
V
Small Signal Current Gain
V
V
pF
Output Capacitance
C
ob
0.7
0.7
0.75
200
50-160
>20
>1.0
<35
VALUE
50
60
5
>60
>50
>5
<50
<50
-55 To +200
<0.5
<1.1
VALUE
IS/ISO 9002
Lic# QSC/L-000019.3
Continental Device India Limited
Data Sheet
Page 1 of 4
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