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參數(shù)資料
| 型號(hào)： | CSA562O |
| 英文描述： | TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 30V的五（巴西）總裁| 500mA的一（c）|至92 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 58K |
| 代理商： | CSA562O |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP SILICON EPITAXIAL TRANSISTOR
CSA562
TO-92
BCE
Audio Frequency Low Power Amplifier Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C )
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
Tj, Tstg
VALUE
35
30
5.0
500
100
500
-55 to +150
UNIT
V
V
V
mA
mA
mW
deg C
SYMBOL
ICBO
IEBO
hFE(1)
hFE(2)
VCE(Sat)
VBE(on)
TEST CONDITION
VCB=35V, IE=0
VEB=5V, IC=0
IC=100mA, VCE=1V
IC=400mA, VCE=6V
IC=100mA, IB=10mA
IC=100mA, VCE=1V
MIN
-
-
70
25
-
-
TYP
-
-
-
-
-
-
MAX
100
100
240
-
0.25
1.0
UNIT
nA
nA
Collector Emitter Saturation Voltage
Base Emitter Voltage
Dynamic Characteristics
Collector Output Capacitance
V
V
Cob VCB=6V, IE=0,
f=1MHz
-
13
-
pF
Transition Frequency
hFE(1) CLASSIFICATION
hFE(2)
ft VCE=6V,IC=20mA,
0 : 70 - 140,
0 : 25 Min,
-
200
-
MHz
Y : 120 - 240,
Y : 40 Min,
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 3
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| CSA562Y | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-92 |
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