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參數資料
| 型號： | CSA643Y |
| 英文描述： | TRANSISTOR | BJT | PNP | 20V V(BR)CEO | TO-92 |
| 中文描述： | 晶體管|晶體管|進步黨| 20V的五（巴西）總裁|到92 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 217K |
| 代理商： | CSA643Y |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP SILICON TRANSISTOR
CSA 643
TO-92
Plastic Package
Audio Frequency General Purpose Power Amplifier Application
Complementary CSD 261
ABSOLUTE MAXIMUM RATINGS (Ta=25oC unless specified otherwise)
DESCRIPTION
SYMBOL
UNIT
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Peak
Collector Power Dissipation
Derate Above 25oC
Operating and Storage Junction
Temperature Range
V
CEO
BV
CBO
V
EBO
I
C
I
CM
P
C
V
V
V
mA
mA
mW
mW/oC
ELECTRICAL CHARACTERISTICS (Ta=25oC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
MAX
UNIT
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
BV
CEO
BV
CBO
BV
EBO
I
C
=10mA,I
B
=0
I
C
=100
μ
A,I
B
=0
I
E
=100
μ
A, I
C
=0
20
40
>5
V
V
V
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
I
CBO
I
EBO
h
FE
V
CB
=25V, I
E
= 0
V
EB
=3V, I
C
= 0
V
CE
=1V,I
C
=100mA*
0.1
0.1
400
μ
A
μ
A
40
Base Emitter Saturation Voltage
V
BE(sat)
* I
C
=500mA,I
B
= 50mA*
1.3
V
Collector Emitter Saturation
Voltage
V
CE(sat)
I
C
=500mA,I
B
=50mA*
0.4
V
*Pulse Condition: = Width < 300us, Duty Cycle < 2%.
h
FE
CLASSIFICATION
R O Y G
40-80 70-140 20-240 200-400
4.0
-55 to +150
VALUE
20
40
5
500
700
500
T
j
, T
stg
oC
IS/ISO 9002
Lic# QSC/L-000019.3
EBC
Continental Device India Limited
Data Sheet
Page 1 of 3
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