
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
CSA683, CSA684
TO-237
Plastic Package
Complementary CSC1383, CSC1384
AF Power Amplifier and Driver
ABSOLUTE MAXIMUM RATINGS(T
a
=25o C unless specified otherwise)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Peak
Collector Current Continuous
Collector Power Dissipation
Junction Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
CP
I
C
*P
C
T
j
T
stg
CSA683
30
25
UNIT
V
V
V
A
A
W
o C
Storage Temperature
o C
*P
C
=750mW/Potting type: P
C
=750mW
ELECTRICAL CHARACTERISTICS (T
a
=25o C unless specified otherwise)
DESCRIPTION
Collector Cut off Current
Collector Emitter Voltage
SYMBOL
I
CBO
V
CEO
TEST CONDITION
V
CB
=20V, I
E
=0
I
C
=2mA, I
B
=0
CSA683
CSA684
I
C
=10
μ
A, I
E
=0
CSA683
CSA684
I
E
=10
μ
A, I
C
=0
I
C
=500mA, V
CE
=10V
I
C
=1A, V
CE
=5V
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0,
f=1MHz
MIN
TYP
MAX
0.1
UNIT
μ
A
25
50
V
V
Collector -Base Voltage
V
CBO
30
60
5
85
50
V
V
V
Emitter-Base Voltage
DC Current Gain
V
EBO
*h
FE
340
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Transition Frequency
Output Capacitance
V
CE(sat)
V
BE(sat)
f
T
C
ob
0.4
1.2
V
V
200
MHz
pF
30
*h
FE
Classifications
Q : 85 - 170
R : 120 - 240
S : 170 - 340
CSA684
60
50
1.0
150
5.0
1.5
1.0
- 55 to +150
IS/ISO 9002
Lic# QSC/L- 000019.3
Continental Device India Limited
Data Sheet
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