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參數(shù)資料
| 型號(hào)： | CSB1065P |
| 英文描述： | TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-126 |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 50V五（巴西）總裁| 3A條一（c）|至126 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 58K |
| 代理商： | CSB1065P |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
CSB1058
TO-92
BCE
Low Frequency Power Amplifier.
Complementary CSD1489
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
Collector -Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
SYMBOL
BVCBO
BVCEO
BVEBO
IC
PC
Tj, Tstg
VALUE
20
16
6.0
2.0
0.75
-55 to +150
UNIT
V
V
V
A
W
deg C
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE *
TEST CONDITION
IC=10uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=16V, IE=0
VEB=6V, IC=0
VCE=2V, IC=0.1A
VCE=2V, IC=2A
IC=1A, IB=0.1A
MIN
20
16
6.0
-
-
100
40
-
TYP
-
-
-
-
-
-
-
-
MAX
-
-
-
2.0
0.2
400
-
0.3
UNIT
V
V
V
uA
uA
Collector Emitter Saturation Voltage
Dynamic Characteristics
Transition Frequency
Collector Output Capacitance
VCE(Sat)
V
ft
Cob
VCE=2V, IC=10mA,
VCB=10V, IE=0
f=1MHz
-
-
80
50
-
-
MHz
pF
hFE* Classification :
A 100-240;
B 200-400;
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 3
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