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參數(shù)資料
| 型號(hào)： | CSC1959O |
| 英文描述： | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 500MA I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|叩| 30V的五（巴西）總裁| 500mA的一（c）|至92 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 58K |
| 代理商： | CSC1959O |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON EPITAXIAL TRANSISTOR
CSC1959
TO-92
BCE
Audio Frequency Low Power Amplifier Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C )
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
SYMBOL
VCBO
VCEO
VEBO
IC
IE
PC
Tj, Tstg
VALUE
35
30
5.0
500
-500
500
-55 to +150
UNIT
V
V
V
mA
mA
mW
deg C
SYMBOL
ICBO
IEBO
hFE(1)
hFE(2)
VCE(Sat)
VBE(on)
TEST CONDITION
VCB=35V, IE=0
VEB=5V, IC=0
IC=100mA, VCE=1V
IC=400mA, VCE=6V
IC=100mA, IB=10mA
IC=100mA, VCE=1V
MIN
-
-
70
25
-
-
TYP
-
-
-
-
-
-
MAX
100
100
240
-
0.25
1.0
UNIT
nA
nA
Collector Emitter Saturation Voltage
Base Emitter Voltage
Dynamic Characteristics
Collector Output Capacitance
V
V
Cob VCB=6V, IE=0,
f=1MHz
-
7.0
-
pF
Transition Frequency
hFE(1) CLASSIFICATION
hFE(2)
ft VCE=6V,IC=20mA,
0 : 70 - 140
0 : 25 M Y : 40 Min,
-
300
-
MHz
Y : 120 - 240,
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 3
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