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參數資料
| 型號： | CSC2120O |
| 英文描述： | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|叩| 30V的五（巴西）總裁| 800mA的一（c）|至92 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 58K |
| 代理商： | CSC2120O |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON EPITAXIAL TRANSISTOR
CSC2120
TO-92
BCE
Audio Power Amplifier Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified )
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Emitter Current
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector Cut off Current
Emitter Cut off Current
Collector -Emitter Voltage
DC Current Gain
SYMBOL
VCBO
VCEO
VEBO
IC
IE
PC
Tj, Tstg
VALUE
35
30
5.0
800
800
600
-55 to +150
UNIT
V
V
V
mA
mA
mW
deg C
SYMBOL
ICBO
IEBO
VCEO
hFE*(1)
hFE*(2)
VCE(Sat) * IC=500mA, IB=20mA
VBE(on)
IC=10mA, VCE=1V
TEST CONDITION
VCB=35V, IE=0
VEB=5V, IC=0
IC=10mA, IB=0
IC=100mA, VCE=1V
IC=700mA, VCE=1V
MIN
-
-
30
100
35
-
0.5
TYP
-
-
-
-
-
-
-
MAX
100
100
-
320
-
0.5
0.8
UNIT
nA
nA
V
Collector Emitter Saturation Voltage
Base Emitter Voltage
Dynamic Characteristics
Collector Output Capacitance
V
V
Cob VCB=10V, IE=0,
f=1MHz
-
13
-
pF
Transition Frequency
*(1)hFE CLASSIFICATION
*Pulse Test : Pulse Width =300us, Duty Cycle=2%
ft VCE=5V,IC=10mA,
0 : 100 - 200,
-
120
-
MHz
Y : 160 - 320,
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 3
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相關代理商/技術參數 |
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| CSC2120Y | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON EPITAXIAL TRANSISTOR |
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