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參數(shù)資料
| 型號(hào)： | CSC2482 |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| 中文描述： | NPN硅外延平面晶體管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 76K |
| 代理商： | CSC2482 |
Continental Device India Limited
An ISO/TS 16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CSC2482
TO-92
Plastic Package
High Voltage Switching and Amplifier Applications
CTV Horizontal Driver and Chroma Output Applications
ABSOLUTE MAXIMUM RATINGS (T
a
=25oC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Storage Temperature
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
I
B
P
C
T
stg
T
j
Junction Temperature
ABSOLUTE MAXIMUM RATINGS(T
a
=25oC unless specified otherwise)
DESCRIPTION
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
SYMBOL
I
CBO
I
EBO
h
FE
TEST CONDITION
V
CB
=240V, I
E
= 0
V
EB
=7V, I
C
= 0
V
CE
=10V, I
C
=4mA
V
CE
=10V, I
C
=20mA
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
V
CE
=10V, I
C
=20mA
V
CB
=20V, I
E
=0, f=1MHz
MIN
TYP
MAX
1.0
1.0
UNITS
μ
A
μ
A
20
30
150
1.0
1.0
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V
CE (sat)
V
BE (sat)
f
T
C
Ob
V
V
50
MHz
pF
3.0
CSC2482Rev_3 121103E
VALUE
300
300
7
100
50
900
oC
- 55 to +150
150
UNITS
V
V
V
mA
mA
mW
oC
ECB
Continental Device India Limited
Data Sheet
Page 1 of 4
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