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參數(shù)資料
| 型號： | CSC2712L |
| 廠商： | Continental Device India Limited |
| 英文描述： | SILICON PLANAR EPITAXIAL TRANSISTOR |
| 中文描述： | 硅外延平面晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 38K |
| 代理商： | CSC2712L |
Continental Device India Limited
Data Sheet
Page 1 of 3
SILICON PLANAR EPITAXIAL TRANSISTOR
N-P-N transistor
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
VCBO
max.
60 V
Collector-emitter voltage (open base)
VCEO
max.
50 V
Emitter-base voltage (open collector)
VEBO
max.
5 V
Collector current (peak value)
IC
max.
150 mA
Total power dissipation at Tamb = 25°C
Ptot
max.
150 mW
Junction temperature
Tj
max.
150 ° C
D.C. current gain
–IC = 2 mA; –VCE = 6V
hFE
min.
70
max.
700
Transition frequency
IC = 1 mA; VCE = 10 V
fT
min.
80 MHz
Noise figure at RS = 10 KW
IC = 0.1 mA; VCE = 6V;
f = 1 kHz
F
max
10 dB
CSC2712
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
Marking
CSC2712Y=1E
CSC2712GR(G)=1F
CSC2712BL(L)=1G
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
SOT-23 Formed SMD Package
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CSC2712Y | SILICON PLANAR EPITAXIAL TRANSISTOR |
| CSC2712GR | SILICON PLANAR EPITAXIAL TRANSISTOR |
| CSC2712GRG | SILICON PLANAR EPITAXIAL TRANSISTOR |
| C522G102K5G5CP | MILITARY SPECIFCATIONS ON BACK |
| C522G102K5G5CR | MILITARY SPECIFCATIONS ON BACK |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CSC2712Y | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:SILICON PLANAR EPITAXIAL TRANSISTOR |
| CSC2713 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SOT-23 |
| CSC2713G | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SOT-23 |
| CSC2713L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SOT-23 |
| CSC2786KF | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
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