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參數資料
| 型號： | CSC2713G |
| 英文描述： | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SOT-23 |
| 中文描述： | 晶體管|晶體管| npn型| 120伏特五（巴西）總裁| 100mA的一（c）| SOT - 23封裝 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 46K |
| 代理商： | CSC2713G |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CSC2786
TO-92
Plastic Package
For use in FM RF Amplifier
ABSOLUTE MAXIMUM RATINGS (T
a
=25oC)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Base Current
Collector Current
Power Dissipation @ T
a
=25oC
Junction Temperature
SYMBOL
V
CEO
V
CBO
V
EBO
I
B
I
C
P
C
T
j
T
stg
UNITS
V
V
V
mA
mA
mW
oC
Storage Temperature Range
oC
ELECTRICAL CHARACTERISTICS (T
a
=25oC unless specified otherwise)
DESCRIPTION
Collector Cut off Current
Emitter Cutoff Current
Collector Emitter Saturation Voltage
Base Emitter On Voltage
DC Current Gain
Transition Frequency
Power Gain
SYMBOL
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
*h
FE
f
T
G
pe
TEST CONDITION
V
CB
=30V, I
E
= 0
V
EB
=4V, Ic = 0
I
C
= 10mA, I
B
= 1.0mA
V
CE
= 6.0V,Ic = 1.0mA
V
CE
= 6.0V, I
C
= 1.0 mA
V
CE
= 6.0V, Ic = - 1.0mA
V
CE
= 6.0V, I
E
= - 1.0mA, R
G
=50k
f = 100MHz
V
CE
= 6.0V, I
E
= - 1.0mA, f=31.9MHz
V
CB
= 6V, I
E
=0, f =1MHz
V
CE
= 6.0V, I
E
= - 1.0mA, R
G
=50k
f = 100MHz
MIN TYP
MAX
100
100
0.30
UNITS
nA
nA
V
V
0.72
40
400
18
180
MHz
dB
Collector to Base Time Constant
Output Capacitance
Noise Figure
Cc rb'b
C
ob
NF
15
1.30
5.00
ps
pF
dB
*h
FE
Classifications
4
20
20
250
- 55 to + 150
VALUE
20
30
+150
MF : 40 - 80 LF : 60 - 120 KF : 90 - 180
ECB
IS/ISO 9002
Lic# QSC/L-000019.3
Continental Device India Limited
Data Sheet
Page 1 of 3
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