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參數資料
| 型號： | CSC3255Q |
| 英文描述： | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-220AB |
| 中文描述： | 晶體管|晶體管|叩| 60V的五（巴西）總裁| 10A條一（c）| TO - 220AB現有 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 89K |
| 代理商： | CSC3255Q |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON EPITAXIAL POWER TRANSISTOR
CSC3255
TO-220
High-Speed Switching Applications.
Complementary CSA1291
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Peak
Collector Power Dissipation @ Tc=25 deg C
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Saturation Voltage
DC Current Gain
Dynamic Characteristics
Transition Frequency
Switching Time
Turn on time
Storage time
Fall time
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
VALUE
80
60
5.0
10.0
12.0
40.0
150
-55 to +150
UNIT
V
V
V
A
A
W
deg C
deg C
SYMBOL TEST CONDITION
VCEO
IC=1mA, IB=0
VCBO
IC=1mA, IE=0
VEBO
IE=1mA, IC=0
ICBO
VCB=40V, IE=0
IEBO
VBE=4V,IC=0
VCE(Sat) IC=5A, IB=0.25A
hFE
IC=1A, VCE=2V
MIN
60
80
5.0
-
-
-
70
TYP
-
-
-
-
-
-
-
MAX
-
-
-
100
100
0.6
250
UNIT
V
V
V
uA
uA
V
ft
VCE=5V, IC=1A,
-
100
-
MHz
ton
tstg
tf
VCC=20V, VBE=5V
IB1=1B2=.0.25A, IC=5A,
Pw=20us, Duty Cycle=1%
-
-
-
0.1
0.5
0.1
-
-
-
us
us
us
hFE Classification
Q : 70 -140 ; R : 100 - 200 ;
S : 160 - 250 ;
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 3
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相關代理商/技術參數 |
參數描述 |
|---|---|
| CSC3255R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-220AB |
| CSC3255S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| CSC3280F | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:POWER TRANSISTORS |
| CSC3280FO | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| CSC3280FR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
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