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參數(shù)資料
| 型號： | CSC4115C |
| 英文描述： | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 2A I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|叩| 20V的五（巴西）總裁|甲一（c）|至92 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 58K |
| 代理商： | CSC4115C |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
CSC4115
(9AW)
TO-92
BCE
MARKING : CSC
4115
BC
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
Collector -Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Current Peak
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
*Single Pulse Pw=10ms
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Cut off Current
SYMBOL
BVCBO
BVCEO
BVEBO
IC
ICP*
PC
Tj, Tstg
VALUE
40
20
6.0
2.0
5.0
0.4
-55 to +150
UNIT
V
V
V
A
A
W
deg C
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE
VCE(Sat)
TEST CONDITION
IC=50uA, IE=0
IC=1mA, IB=0
IE=50uA, IC=0
VCB=30V, IE=0
VCE=20V, IB=0
VEB=5V, IC=0
VCE=2V, IC=0.1A
IC=2A, IB=0.1A
MIN
40
20
6.0
-
-
-
120
-
TYP
-
-
-
-
-
-
-
-
MAX
-
-
-
0.1
1.0
0.1
560
1.0
UNIT
V
V
V
uA
uA
uA
Emitter Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Dynamic Characteristics
Transition Frequency
V
ft
VCE=2V, IC=0.5A,
f=100MHz
VCB=10V, IE=0
f=1MHz
-
150
-
MHz
Collector Output Capacitance
Cob
-
25
-
pF
Hfe Classifications
A 120-270; B 180-390;
C 270-560;
"For BC" 180- 560
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 3
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