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參數(shù)資料
| 型號(hào)： | CSC815Y |
| 英文描述： | TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 200MA I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|叩| 45V的五（巴西）總裁| 200mA的一（c）|至92 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 58K |
| 代理商： | CSC815Y |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON EPITAXIAL TRANSISTOR
CSC815
TO-92
CBE
Low Frequency Amplifier And High Frequency Oscillator.
Complementary CSA539
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
60
45
5
200
400
150
V
V
V
mA
mW
deg C
deg C
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
Base Emitter On Voltage
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
VCBO
VCEO
VEBO
ICBO
IEBO
VBE(on)
VCE(Sat)
VBE(Sat)
hFE
IC=100uA,IE=0
IC=10mA,IB=0
IE=10uA, IC=0
VCB=45V, IE=0
VEB=3V, IC=0
VCE=10V,IC=10mA
IC=150mA,IB=15mA
IC=150mA,IB=15mA
IC=50mA, VCE=1V
60
45
5
-
-
0.6
-
-
40
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
nA
nA
V
V
V
100
100
0.90
0.40
1.1
400
Dynamic Characteristics
Transition Frequency
Collector Output Capacitance
ft
Cob
VCE=10V,IC=10mA,
VCB=10V, IE=0
f=1MHz
100
-
-
-
-
MHz
pF
4.0
hFE CLASSIFICATION
R: 40-80
Q: 70-140
Y: 120-240
G: 200-400
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 3
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