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參數資料
| 型號： | CSD1833E |
| 英文描述： | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7A I(C) | TO-220AB |
| 中文描述： | 晶體管|晶體管|叩| 80V的五（巴西）總裁| 7A條一（c）| TO - 220AB現有 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 89K |
| 代理商： | CSD1833E |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON EPITAXIAL POWER TRANSISTOR
CSD1833
(9AW)
TO220
MARKING : AS BELOW
Low Freq. Power AMP.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Pulse*
Collector Power Dissipation Ta 25degC
Tc=25 deg C
Junction Temperature
Storage Temperature Range
*Single Pulse Pw=100ms
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
100
80
5
7
10
2
30
150
-55 to +150
UNIT
V
V
V
A
A
W
W
deg C
deg C
PC
Tj
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut off Current
SYMBOL
VCEO
VCBO
VEBO
ICBO
ICEO
IEBO
VCE(Sat)**
VBE(Sat)**
hFE**
TEST CONDITION
IC=1mA, IB=0
IC=50uA, IE=0
IE=50uA,IC=0
VCB=100V, IE=0
VCE=80, IB=0
VBE=4V,IC=0
IC=4A,IB=0,4A
IC=4A,IB=0,4A
IC=1A, VCE=5V
MIN
80
100
5
-
-
-
-
-
60
TYP
-
-
-
-
-
-
-
-
-
MAX
-
-
-
10
1
10
1
1.5
320
UNIT
V
V
V
uA
uA
uA
V
V
Emitter Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
Dynamic Characteristics
Transition Frequency
ft
VCE=5V,IC=50mA,
f=5MHz
-
5
-
MHz
Collector Output Capacitance
Cob
VCB=10V, IE=0
f=1MHz
-
150
-
pF
hFE CLASSIFICATION**
D : 60-120; E : 100-200,
F: 160-320
CSD
1833F
MARKING
CSD
1833D
CSD
1833E
**Pulse Test
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 3
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