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參數資料
| 型號： | CSD471AO |
| 英文描述： | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 1A I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|叩| 30V的五（巴西）總裁| 1A條一（c）|至92 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 58K |
| 代理商： | CSD471AO |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CSD471A
TO-92
BCE
Low Frequency Power Amplifier.
Complementary CSB564A
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C )
DESCRIPTION
Collector -Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Dynamic Characteristics
Transition Frequency
Output Capacitance
SYMBOL
BVCBO
BVCEO
BVEBO
IC
PC
Tj
Tstg
VALUE
40
30
5.0
1.0
800
150
-55 to +150
UNIT
V
V
V
A
mW
deg C
deg C
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
hFE
VCE(Sat)
VBE(Sat)
TEST CONDITION
IC=100uA, IE=0
IC=10mA, IB=0
IE=100uA, IC=0
VCB=30V, IE=0
VCE=1V, IC=100mA
IC=1A, IB=0.1A
IC=1A, IB=0.1A
MIN
40
30
5.0
-
70
-
-
TYP
-
-
-
-
-
-
-
MAX
-
-
-
0.1
400
0.5
1.2
UNIT
V
V
V
uA
V
V
ft
Cob
VCE=6V, IC=10mA,
VCB=6V, IE=0
f=1MHz
-
-
130
16
-
-
MHz
pF
hFE* Classification :
O : 70-140;
Y : 120-240;
G : 200-400;
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 3
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