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參數資料
| 型號： | CTN639 |
| 英文描述： | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-237 |
| 中文描述： | 晶體管|晶體管|叩| 80V的五（巴西）總裁| 1A條一（c）|至237 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 48K |
| 代理商： | CTN639 |
Continental Device India Limited
Data Sheet
Page 1 of 4
CTN635, 637, 639 NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CTN636, 638, 640 PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Complementary Transistors in Plastic Package for Driver Stage of Audio Amplifier.
CTN635, CTN637, CTN639
CTN636, CTN638, CTN640
1 = COLLECTOR
2 = BASE
3 = EMITTER
ABSOLUTE MAXIMUM RATINGS
Ratings
SymbolCTN635 CTN637 CTN639
CTN636 CTN638 CTN640
Units
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
D
45
60
100
V
Collector-Emitter Voltage
45
60
80
V
Emitter-Base Voltage
5
-
V
Collector Current – Continuous
-
1
-
A
Peak
-
1.5
-
A
Base Current – Continuous
-
100
-
mA
Peak
-
200
-
mA
Power Dissipation @ Ta=25oC
-
750
-
mW
Derate above 25°C
-
6
-
mW/°C
Power Dissipation @ Tc=25oC
P
D
-
2.5
-
W
Derate above 25°C
-
20
-
mW/°C
Operating And Storage Junction
Temperature Range
T
j
,T
stg
–55 to +150
oC
1 2 3
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
E B C
TO-237 Plastic Package
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