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參數(shù)資料
型號(hào): CXK5T16100TM-
廠商: Sony Corporation
英文描述: 128 x 64 pixel format, LED Backlight available
中文描述: 65536字× 16位高速CMOS靜態(tài)RAM
文件頁(yè)數(shù): 1/10頁(yè)
文件大小: 138K
代理商: CXK5T16100TM-
– 1 –
CXK5T16100TM
-12LLX
PE96405-ST
65536-word
×
16-bit High Speed CMOS Static RAM
For the availability of this product, please contact the sales office.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Description
The CXK5T16100TM is a general purpose high
speed CMOS static RAM organized as 65536-
words by 16-bits.
Special feature are low power consumption and
high speed.
The CXK5T16100TM is a suitable RAM for portable
equipment with battery back up.
Features
Extended operating temperature range: –25 to +85°C
Wide supply voltage range operation: 2.7 to 3.6V
Fast access time:
3.0V operation
3.3V operation
Low power consumption operation:
Standby / DC operation
1.6μW (typ.) / 3.3mW (typ.)
100μW (max.) / 11mW (max.)
Fully static memory ··· No clock or timing strobe
required
Equal access and cycle time
Common data input and output: three state output
Directly LVTTL compatible: All inputs and outputs
Low voltage data retention: 2.0V (min.)
400mil 44pin TSOP (type
II
) package
(Access time)
120ns (max.)
100ns (max.)
Function
65536-word x 16-bit static RAM
Structure
Silicon gate CMOS IC
Block Diagram
A13
A12
A11
A10
A9
A8
Row
Decoder
Memory
Matrix
512
1024
I/O Gate
Column
Decoder
I/O Buffer
I/O9 I/O16
A1
A0
A7
A6
A5
A4
A3
A2
A15
A14
WE
OE
CE
UB
LB
Memory
Matrix
512
1024
I/O Gate
Column
Decoder
I/O Buffer
I/O1
I/O8
Control
Vcc
GND
Vcc
GND
Pre
Decoder
Buffer
Buffer
44 pin TSOP (PIastic)
Preliminary
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