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參數資料
| 型號： | CY62137FV30 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 2-Mbit (128K x 16) Static RAM(2Mbit (128K x 16)靜態RAM) |
| 中文描述： | 2兆位（128K的× 16）靜態隨機存儲器（2Mbit的（128K的× 16），靜態內存） |
| 文件頁數： | 1/12頁 |
| 文件大小： | 511K |
| 代理商： | CY62137FV30 |
Cypress Semiconductor Corporation
Document Number: 001-07141 Rev. *E
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised August 03, 2007
CY62137FV30 MoBL
2-Mbit (128K x 16) Static RAM
Features
■
Very high speed: 45 ns
■
Temperature ranges
Industrial: –40°C to +85°C
Automotive-A: –40°C to +85°C
Automotive-E: –40°C to +125°C
■
Wide voltage range: 2.20V–3.60V
■
Pin compatible with CY62137CV/CV25/CV30/CV33,
CY62137V, and CY62137EV30
■
Ultra low standby power
Typical standby current:
1
μ
A
Maximum standby current:
5
μ
A (Industrial)
■
Ultra low active power
Typical active current: 1.6 mA at f = 1 MHz (45 ns speed)
■
Easy memory expansion with CE and OE features
■
Automatic power down when deselected
■
CMOS for optimum speed and power
■
Byte power down feature
■
Available in Pb-free 48-Ball VFBGA and 44-pin TSOP II
package
Functional Description
The CY62137FV30 is a high performance CMOS static RAM
organized as 128K words by 16 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life (MoBL
) in portable
applications such as cellular telephones. The device also has an
automatic power down feature that significantly reduces power
consumption by 90% when addresses are not toggling. Placing
the device into standby mode reduces power consumption by
more than 99% when deselected (CE HIGH or both BLE and
BHE are HIGH). The input and output pins (IO
0
through IO
15
) are
placed in a high impedance state in the following conditions:
■
Deselected (CE HIGH)
■
Outputs are disabled (OE HIGH)
■
Both Byte High Enable and Byte Low Enable are disabled
(BHE, BLE HIGH)
■
Write operation is active (CE LOW and WE LOW)
Write to the device by taking Chip Enable (CE) and Write Enable
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data
from IO pins (IO
0
through IO
7
) is written into the location
specified on the address pins (A
0
through A
16
). If Byte High
Enable (BHE) is LOW, then data from IO pins (IO
8
through IO
15
)
is written into the location specified on the address pins (A
0
through A
16
).
Read from the device by taking Chip Enable (CE) and Output
Enable (OE) LOW, while forcing the Write Enable (WE) HIGH. If
Byte Low Enable (BLE) is LOW, then data from the memory
location specified by the address pins appear on IO
0
to IO
7
. If
Byte High Enable (BHE) is LOW, then data from memory
appears on IO
8
to IO
15
. See the
“Truth Table”
on page 9 for a
complete description of read and write modes.
application note AN1064, SRAM System Guidelines
.
128K x 16
RAM Array
IO
0
–IO
7
R
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
COLUMN DECODER
A
1
A
1
A
1
A
1
A
1
S
DATA IN DRIVERS
OE
BLE
IO
8
–IO
15
CE
WE
BHE
A
1
A
0
A
9
A
10
BHE
BLE
CE
POWER DOWN
CIRCUIT
Logic Block Diagram
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| CY62137V MoBL | 128K x 16 Static RAM(128K x 16 靜態RAM) |
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| CY62137VLL-55ZI | 2-Mbit (128K x 16) Static RAM |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| CY62137FV30_08 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (128K x 16) Static RAM |
| CY62137FV30_09 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (128K x 16) Static RAM |
| CY62137FV30_11 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (128K x 16) Static RAM |
| CY62137FV30_1106 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (128 K x 16) Static RAM Automatic power down when deselected |
| CY62137FV30LL | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (128K x 16) Static RAM |
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