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參數資料
| 型號： | CY62148BLL-70ZRC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 512K x 8 Static RAM |
| 中文描述： | 512K X 8 STANDARD SRAM, 70 ns, PDSO32 |
| 封裝： | REVERSE, TSOP2-32 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 189K |
| 代理商： | CY62148BLL-70ZRC |
512K x 8 Static RAM
CY62148B MoBL
Cypress Semiconductor Corporation
Document #: 38-05039 Rev. *B
3901 North First Street
San Jose
CA 95134
408-943-2600
October 8, 2001
Features
4.5V
–
5.5V operation
Low active power
—
Typical active current: 2.5 mA @ f = 1 MHz
—
Typical active current: 12.5 mA @ f = f
max
Low standby current
Automatic power-down when deselected
TTL-compatible inputs and outputs
Easy memory expansion with CE
and OE features
CMOS for optimum speed/power
Functional Description
The CY62148B is a high-performance CMOS static RAM or-
ganized as 512K words by 8 bits. Easy memory expansion is
provided by an active LOW Chip Enable (CE), an active LOW
Output Enable (OE), and three-state drivers. This device has
an automatic power-down feature that reduces power con-
sumption by more than 99% when deselected.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O
pins (I/O
0
through I/O
7
) is then written into the location speci-
fied on the address pins (A
0
through A
18
).
Reading from the device is accomplished by taking Chip En-
able (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH for read. Under these conditions, the con-
tents of the memory location specified by the address pins will
appear on the I/O pins.
The eight input/output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW, and WE LOW).
The CY62148B is available in a standard 32-pin 450-mil-wide
body width SOIC, 32-pin TSOP II, and 32-pin Reverse TSOP
II packages.
A
1
A
Logic Block Diagram
Pin Configuration
Top View
A
1
A
4
A
5
A
6
A
7
A
12
A
14
A
16
A
17
COLUMN
DECODER
R
S
INPUT BUFFER
POWER
DOWN
WE
OE
I/O
0
I/O
1
I/O
2
I/O
3
512 x 256 x 8
ARRAY
I/O
7
I/O
6
I/O
5
I/O
4
A
0
A
2
A
1
A
3
CE
A
8
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
19
18
20
24
23
22
21
25
28
27
26
29
32
31
30
16
17
A
16
A
14
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
WE
A
13
A
8
A
9
A
11
V
CC
A
15
A
18
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
I/O
0
I/O
1
I/O
2
GND
CE
OE
A
10
A
9
A
1
A
1
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
30
31
29
25
26
27
28
24
21
22
23
20
17
18
19
1
32
A
17
I/O
2
I/O
1
I/O
0
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
13
WE
A
18
A
15
V
cc
A
12
A
14
A
16
A
8
A
9
TSOP II
SOIC
TSOP II
Top View
Reverse
GND
I/O
3
I/O
4
I/O
6
I/O
7
CE
A
10
I/O
5
OE
A
11
A
17
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相關代理商/技術參數 |
參數描述 |
|---|---|
| CY62148BLL-70ZRI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:512K x 8 Static RAM |
| CY62148BLL-70ZXI | 功能描述:IC SRAM 4MBIT 70NS 32TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MoBL® 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY62148BN | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (512K x 8) Static RAM |
| CY62148BN_09 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (512K x 8) Static RAM |
| CY62148BN_10 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (512K x 8) Static RAM |
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