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參數(shù)資料
| 型號： | CY62167DV20LL |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 16-Mb (1024K x 16) Static RAM |
| 中文描述： | 16 MB的（1024K × 16）靜態(tài)RAM |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 247K |
| 代理商： | CY62167DV20LL |
16-Mb (1024K x 16) Static RAM
CY62167DV20
MoBL2
Cypress SemiconductorCorporation
Document #: 38-05327 Rev. *B
3901 North First Street
SanJose
,
CA 95134
408-943-2600
Revised January 2, 2004
Features
Very high speed: 55 ns and 70 ns
Wide voltage range: 1.65V
to
2.2V
Ultra-low active power
—Typical active current: 1.5 mA @ f = 1 MHz
—Typical active current: 18 mA @ f = f
MAX
Ultra-low standby power
Easy memory expansion with CE
1
, CE
2
, and OE
features
Automatic power-down when deselected
CMOS for optimum speed/power
Packages offered in a 48-ball FBGA
Functional Description
[1]
The CY62167DV20 is a high-performance CMOS static RAM
organized as 1024K words by 16 bits. This device features
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life
TM
(MoBL
) in
portable applications such as cellular telephones. The device
also has an automatic power-down feature that significantly
reduces power consumption by 99% when addresses are not
toggling. The device can be put into standby mode reducing
power consumption by more than 99% when deselected Chip
Enable 1 (CE
1
) HIGH or Chip Enable 2 (CE
2
) LOW or both
BHE and BLE are HIGH. The input/output pins (I/O
through
I/O
15
) are placed in a high-impedance state when: deselected
Chip Enable 1 (CE
1
) HIGH or Chip Enable 2 (CE
2
) LOW,
outputs are disabled (OE HIGH), both Byte High Enable and
Byte Low Enable are disabled (BHE, BLE HIGH) or during a
write operation (Chip Enable 1 (CE
1
) LOW and Chip Enable 2
(CE
2
) HIGH and WE LOW).
Writing to the device is accomplished by taking Chip Enable 1
(CE
) LOW and Chip Enable 2 (CE
) HIGH and Write Enable
(WE) input LOW. If Byte Low Enable (BLE) is LOW, then das
pins (A
0
through A
19
). If Byte High Enable (BHE) is LOW, then
data from I/O pins (I/O
through I/O
15
) is written into the
location specified on the ad
Reading from the device is accomplished by taking Chip
Enable 1 (CE
1
) LOW and Chip Enable 2 (CE
2
) HIGH and
Output Enable (OE) LOW while forcing the Write Enable (WE)
HIGH. If Byte Low Enable (<>O
. If Byte High Enable (BHE)
is LOW, then data from memory will appear on I/O
8
to I/O
15
.
See the truth table at the back of this data sheet for a complete
description of read and write modes.
Note:
1.
For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
1024K x 16
RAM ARRAY
2048 x 512 x 16
I/O
0
–I/O
7
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
COLUMN DECODER
A
1
A
1
A
1
A
1
A
1
S
DATA IN DRIVERS
OE
I/O
8
–I/O
15
WE
BLE
BHE
A
1
A
0
A
1
A
9
A
1
A
10
Power-down
Circuit
BHE
BLE
CE
2
CE
1
CE
2
CE
1
A
1
Logic Block Diagram
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY62167DV20LL-55BVI | 16-Mb (1024K x 16) Static RAM |
| CY62167DV20LL-70BVI | 16-Mb (1024K x 16) Static RAM |
| CY62167DV30LL-45ZXI | 16-Mbit (1M x 16) Static RAM |
| CY62167DV30LL-55BVXI | 16-Mbit (1M x 16) Static RAM |
| CY62167DV30LL-55ZXI | 16-Mbit (1M x 16) Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY62167DV20LL-55BVI | 制造商:Rochester Electronics LLC 功能描述:16M (1M X 16)- 2.0V SLOW ASYNCH SRAM - Bulk |
| CY62167DV20LL-5BVI | 制造商:Cypress Semiconductor 功能描述: |
| CY62167DV30L-70BVI | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3V 16M-Bit 1M x 16 70ns 48-Pin VFBGA |
| CY62167DV30LL-45ZI | 制造商:Cypress Semiconductor 功能描述: |
| CY62167DV30LL-45ZXI | 功能描述:IC SRAM 16MBIT 45NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MoBL® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
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