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參數資料
| 型號： | CY6264-70SNI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 8K x 8 Static RAM |
| 中文描述： | 8K X 8 STANDARD SRAM, 70 ns, PDSO28 |
| 封裝： | 0.300 INCH, SNC-28 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 265K |
| 代理商： | CY6264-70SNI |
8K x 8 Static RAM
CY6264
Cypress Semiconductor Corporation
Document #: 001-02367 Rev. *A
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised August 8, 2006
Features
Temperature Ranges
— Commercial: 0°C to 70°C
— Industrial: –40°C to 85°C
— Automotive-A: –40°C to 85°C
High Speed
—
55 ns
CMOS for optimum speed/power
Easy memory expansion with CE
1
, CE
2
and OE
features
TTL-compatible inputs and outputs
Automatic power-down when deselected
Available in Pb-free and non Pb-free 28-lead SNC
package
Functional Description
The CY6264 is a high-performance CMOS static RAM
organized as 8192 words by 8 bits. Easy memory expansion
is provided by an active LOW chip enable (CE
1
), an active
HIGH chip enable (CE
2
), and active LOW output enable (OE)
and three-state drivers. Both devices have an automatic
power-down feature (CE
1
), reducing the power consumption
by over 70% when deselected. The CY6264 is packaged in a
450-mil (300-mil body) SOIC.
An active LOW write enable signal (WE) controls the
writing/reading operation of the memory. When CE
1
and WE
inputs are both LOW and CE
2
is HIGH, data on the eight data
input/output pins (I/O
0
through I/O
7
) is written into the memory
location addressed by the address present on the address
pins (A
0
through A
12
). Reading the device is accomplished by
selecting the device and enabling the outputs, CE
1
and OE
active LOW, CE
2
active HIGH, while WE remains inactive or
HIGH. Under these conditions, the contents of the location
addressed by the information on address pins is present on
the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and write enable
(WE) is HIGH. A die coat is used to ensure alpha immunity.
Pin Configuration
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
0
A
A
9
I/O
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
CE
2
A
3
A
2
A
1
OE
A
0
CE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
NC
A
4
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
I/O
0
I/O
1
I/O
2
GND
8K x 8
ARRAY
INPUT BUFFER
COLUMN DECODER
R
S
POWER
DOWN
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
CE
1
CE
2
WE
OE
Top View
SOIC
Logic Block Diagram
1
1
A
1
A
[+] Feedback
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相關代理商/技術參數 |
參數描述 |
|---|---|
| CY6264-70SNIT | 制造商:Cypress Semiconductor 功能描述: |
| CY6264-70SNXA | 功能描述:靜態隨機存取存儲器 SLO 5.0V STD PWR 8KX8 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY6264-70SNXAT | 功能描述:靜態隨機存取存儲器 SLO 5.0V STD PWR 8KX8 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY6264-70SNXC | 功能描述:靜態隨機存取存儲器 SLO 5.0V STD PWR 8KX8 靜態隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY6264-70SNXCT | 功能描述:靜態隨機存取存儲器 SLO 5.0V STD PWR 8KX8 靜態隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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