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參數資料
| 型號： | CY7C1018V33-12VC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 128K x 8 Static RAM |
| 中文描述： | 128K X 8 STANDARD SRAM, 12 ns, PDSO32 |
| 封裝： | 0.300 INCH, SOJ-32 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 152K |
| 代理商： | CY7C1018V33-12VC |
128K x 8 Static RAM
CY7C1018V33
CY7C1019V33
Cypress Semiconductor Corporation
3901 North First Street
San Jose
CA 95134
408-943-2600
October 18, 1999
3
Features
High speed
—t
AA
= 10 ns
CMOS for optimum speed/power
Center power/ground pinout
Automatic power-down when deselected
Easy memory expansion with CE
and OE options
Functional Description
The CY7C1018V33/CY7C1019V33 is a high-performance
CMOS static RAM organized as 131,072 words by 8 bits. Easy
memory expansion is provided by an active LOW Chip Enable
(CE), an active LOW Output Enable (OE), and three-state driv-
ers. This device has an automatic power-down feature that
significantly reduces power consumption when deselected.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O
pins (I/O
0
through I/O
7
) is then written into the location speci-
fied on the address pins (A
0
through A
16
).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
The eight input/output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW, and WE LOW).
The CY7C1018V33 is available in a standard 300-mil-wide
SOJ and CY7C1019V33 is available in a standard
400-mil-wide
package.
The
CY7C1019V33 are functionally equivalent in all other re-
spects.
CY7C1018V33
and
1
A
1
A
Logic Block Diagram
Pin Configurations
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
COLUMN
DECODER
R
S
INPUT BUFFER
POWER
DOWN
WE
OE
I/O
0
I/O
1
I/O
2
I/O
3
512 x 256 x 8
ARRAY
I/O
7
I/O
6
I/O
5
I/O
4
A
0
A
1
A
1
A
1
A
1
CE
A
1
A
9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
19
18
20
24
23
22
21
25
28
27
26
Top View
SOJ
29
32
31
30
16
17
A
7
A
1
A
2
A
3
CE
I/O
0
I/O
1
V
CC
V
SS
A
13
OE
I/O
7
I/O
6
V
SS
A
16
A
15
A
14
A
12
A
11
A
10
A
9
A
8
I/O
2
I/O
3
WE
A
0
A
4
A
5
A
6
I/O
4
V
CC
I/O
5
1019V33–1
1019V33–2
Selection Guide
7C1019V33-10
10
175
5
7C1018V33-12
7C1019V33-12
12
160
5
0.5
7C1018V33-15
7C1019V33-15
15
145
5
0.5
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum Standby Current (mA)
L
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相關代理商/技術參數 |
參數描述 |
|---|---|
| CY7C1019B-10VC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1019B-10VCT | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1019B-12VC | 功能描述:IC SRAM 1MBIT 12NS 32SOJ RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤 |
| CY7C1019B-12ZXC | 功能描述:IC SRAM 1MBIT 12NS 32TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤 |
| CY7C1019B-12ZXCT | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
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