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參數資料
| 型號： | CY7C1021BN-12VI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 1-Mbit (64K x 16) Static RAM |
| 中文描述： | 64K X 16 STANDARD SRAM, 12 ns, PDSO44 |
| 封裝： | 0.400 INCH, SOJ-44 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 469K |
| 代理商： | CY7C1021BN-12VI |
1-Mbit (64K x 16) Static RAM
CY7C1021BN
CY7C10211BN
Cypress Semiconductor Corporation
Document #: 001-06494 Rev. *A
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised September 28, 2006
Features
Temperature Ranges
— Commercial: 0°C to 70°C
— Industrial: –40°C to 85°C
— Automotive-A: –40°C to 85°C
— Automotive-E: –40°C to 125°C
High speed
— t
AA
= 10 ns (Commercial)
— t
AA
= 15 ns (Automotive)
CMOS for optimum speed/power
Low active power
— 825 mW (max.)
Automatic power-down when deselected
Independent control of upper and lower bits
Available in Pb free and non Pb free 44-pin TSOP II and
44-pin 400-mil-wide SOJ
Functional Description
[1]
The CY7C1021BN/CY7C10211BN is a high-performance
CMOS static RAM organized as 65,536 words by 16 bits. This
device has an automatic power-down feature that significantly
reduces power consumption when deselected.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
1
through I/O
8
), is
written into the location specified on the address pins (A
0
through A
15
). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O
9
through I/O
16
) is written into the location
specified on the address pins (A
0
through A
15
).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
1
to I/O
8
. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O
9
to I/O
16
. See
the truth table at the back of this data sheet for a complete
description of read and write modes.
The input/output pins (I/O
1
through I/O
16
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a write operation (CE
LOW, and WE LOW).
The CY7C1021BN/CY7C10211BN is available in standard
44-pin TSOP Type II and 44-pin 400-mil-wide SOJ packages.
Customers should use part number CY7C10211BN when
ordering parts with 10 ns t
AA
, and CY7C1021BN when
ordering 12 ns and 15 ns t
AA
.
Note:
1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com
Logic Block Diagram
64K x 16
RAM Array
512 X 2048
I/O
1
–I/O
8
R
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
COLUMN DECODER
A
9
A
1
A
1
A
1
A
1
A
1
A
1
S
DATA IN
DRIVERS
OE
BLE
I/O
9
–I/O
16
CE
BHE
A
8
WE
A
15
A
14
A
13
A
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
31
30
32
36
35
34
33
37
40
39
38
Top View
SOJ / TSOP II
41
44
43
42
16
17
29
28
V
CC
V
SS
I/O
5
I/O
6
A
4
A
3
A
2
A
1
A
0
OE
BHE
BLE
V
SS
V
CC
I/O
12
I/O
11
I/O
10
I/O
9
A
5
A
6
A
7
I/O
16
I/O
15
I/O
14
I/O
13
CE
I/O
1
I/O
2
I/O
3
I/O
4
NC
A
8
A
9
A
10
A
11
18
19
20
21
27
26
25
24
22
23
NC
I/O
7
I/O
8
PinConfigurations
[+] Feedback
相關PDF資料 |
PDF描述 |
|---|---|
| CY7C1021BN-12VXC | 1-Mbit (64K x 16) Static RAM |
| CY7C1021BN-12VXI | 1-Mbit (64K x 16) Static RAM |
| CY7C1021BN-12ZC | 1-Mbit (64K x 16) Static RAM |
| CY7C1021BN-12ZXC | 1-Mbit (64K x 16) Static RAM |
| CY7C1021BN-15VC | 1-Mbit (64K x 16) Static RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CY7C1021BN-12VXC | 功能描述:IC SRAM 1MBIT 12NS 44SOJ RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C1021BN-12VXCT | 功能描述:IC SRAM 1MBIT 12NS 44SOJ RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C1021BN-12VXI | 功能描述:IC SRAM 1MBIT 12NS 44SOJ RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C1021BN-12VXIT | 功能描述:IC SRAM 1MBIT 12NS 44SOJ RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C1021BN-12ZXC | 功能描述:IC SRAM 1MBIT 12NS 44TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
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