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參數(shù)資料
| 型號： | CY7C1021CV33-12BAI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 64K x 16 Static RAM |
| 中文描述： | 64K X 16 STANDARD SRAM, 12 ns, PBGA48 |
| 封裝： | 7 X 7 MM, 1.20 MM HEIGHT, FBGA-48 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 231K |
| 代理商： | CY7C1021CV33-12BAI |
64K x 16 Static RAM
CY7C1021CV33
Cypress Semiconductor Corporation
Document #: 38-05132 Rev. *C
3901 North First Street
San Jose
CA 95134
408-943-2600
Revised October 30, 2002
Features
Pin- and function-compatible with CY7C1021BV33
High speed
—t
AA
= 8, 10, 12, and 15 ns
CMOS for optimum speed/power
Low active power
—360 mW (max.)
Data retention at 2.0V
Automatic power-down when deselected
Independent control of upper and lower bits
Available in 44-pin TSOP II, 400-mil SOJ, 48-ball FBGA
Functional Description
The CY7C1021CV33 is a high-performance CMOS static
RAM organized as 65,536 words by 16 bits. This device has
an automatic power-down feature that significantly reduces
power consumption when deselected.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
1
through I/O
8
), is
written into the location specified on the address pins (A
0
through A
15
). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O
9
through I/O
16
) is written into the location
specified on the address pins (A
0
through A
15
).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
1
to I/O
8
. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O
9
to I/O
16
. See
the truth table at the end of this data sheet for a complete
description of Read and Write modes.
The input/output pins (I/O
1
through I/O
16
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a Write operation
(CE LOW, and WE LOW).
The CY7C1021CV33 is available in standard 44-pin TSOP
Type II 400-mil-wide SOJ packages, as well as a 48-ball
FBGA.
Selection Guide
CY7C1021CV33-8
8
95
5
CY7C1021CV33-10
10
90
5
CY7C1021CV33-12
12
85
5
CY7C1021CV33-15
15
80
5
Unit
ns
mA
mA
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
WE
A
15
A
14
A
13
A
NC
Logic Block Diagram
Pin Configuration
SOJ / TSOP II
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
31
30
32
36
35
34
33
37
40
39
38
Top View
41
44
43
42
16
17
29
28
V
CC
V
SS
I/O
5
I/O
6
A
4
A
3
A
2
A
1
A
0
OE
BHE
BLE
V
SS
V
CC
I/O
12
I/O
11
I/O
10
I/O
9
A
5
A
6
A
7
I/O
16
I/O
15
I/O
14
I/O
13
CE
I/O
1
I/O
2
I/O
3
I/O
4
NC
A
8
A
9
A
10
A
11
18
19
20
21
27
26
25
24
22
23
NC
I/O
7
I/O
8
64K x 16
RAM Array
512 X 2048
I/O
1
–
I/O
8
R
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
COLUMN DECODER
A
9
A
1
A
1
A
1
A
1
A
1
A
1
S
DATA IN DRIVERS
BLE
I/O
9
–
I/O
16
OE
WE
A
8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1021CV33-12VC | 64K x 16 Static RAM |
| CY7C1021CV33-12VI | 64K x 16 Static RAM |
| CY7C1021CV33-12ZC | 64K x 16 Static RAM |
| CY7C1021CV33-12ZI | 64K x 16 Static RAM |
| CY7C1021CV33-15BAC | 64K x 16 Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1021CV33-12BAIT | 制造商:Cypress Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
| CY7C1021CV33-12BAXI | 功能描述:IC SRAM 1MBIT 12NS 48LFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C1021CV33-12BAXIT | 功能描述:IC SRAM 1MBIT 12NS 48LFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C1021CV33-12VC | 功能描述:IC SRAM 1MBIT 12NS 44SOJ RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設(shè)備封裝:48-TSOP 包裝:托盤 |
| CY7C1021CV33-12VCT | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 44-Pin SOJ T/R |
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